A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.

An object of the present invention is to provide a low-cost thermoelectric converter element having high productivity and excellent conversion efficiency. A thermoelectric converter element according to the present invention includes a substrate 4, a magnetic film 2 provided on the substrate 4 with a certain magnetization direction A and formed of a polycrystalline magnetically insulating material, and an electrode 3 provided on the magnetic film 2 with a material exhibiting a spin-orbit interaction. When a temperature gradient is applied to the magnetic film 2, a spin current is generated so as to flow from the magnetic film 2 toward the electrode 3. A current I is generated in a direction perpendicular to the magnetization direction A of the magnetic film 2 by the inverse spin Hall effect in the electrode 3.

Methods, apparatuses, and systems associated with tunable pumped two-phase liquid cooling thermal management are disclosed. In embodiments, a tunable cooling apparatus may include a thermoelectric cooler device, TEC, that has a hot side and a cold side, where the cold side is to cool the coolant in route to an inlet manifold of the cold plate before the coolant enters the inlet manifold, and the hot side may be to warm the coolant in route from an outlet manifold of the cold plate after the coolant flows through the cold plate and exits the outlet manifold and or vice versa. In embodiments, the coolant may be either in a liquid state or in a vapor state. Other embodiments may be described and/or claimed.

A heat transfer device that includes a thermionic power generator, a wiring, a load circuit, and a switch circuit. The thermionic power generator includes an emitter electrode and a collector electrode facing each other with an inter-electrode gap distance, and converts heat energy into electric energy by capturing, with the collector electrode, a thermoelectron that is emitted from the emitter electrode. The wiring electrically connects the emitter electrode and the collector electrode. The load circuit is connected to an electric current path of by wiring between the emitter electrode and the collector electrode. The switch circuit switches between an ON state and an OFF state.

A thermoelectric conversion element includes: a magnetic body having a magnetization; and an electromotive body formed of material exhibiting a spin orbit coupling and jointed to the magnetic body. The magnetic body has an upper joint surface jointed to the electromotive body. The upper joint surface has concavities and convexities.

The thermoelectric module includes a first thermoelectric element including a first thermoelectric conversion layer and a first electrolyte layer stacked in order along a stacked direction, a second thermoelectric element including a second electrolyte layer and a second thermoelectric conversion layer stacked in order along the stacked direction, and a first current collector located between the first thermoelectric element and the second thermoelectric element in the stacked direction.

Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between on and off states by controlling an in-plane magnetization orientation of the magnetic insulator. In the on state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the off state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.

A thermoelectric conversion apparatus includes a substrate, and a power generation part formed on the substrate for generating a thermoelectric power. The power generation part includes a magnetic layer with magnetization and an electrode layer including a material exhibiting a spin-orbit interaction and formed on the magnetic layer. The substrate and the power generation part have flexibility, respectively. The thermoelectric conversion apparatus further includes a cover layer having flexibility and formed on the substrate so as to cover at least the power generation part. The magnetic layer includes magnetic layer pieces separated in a layer direction with a gap portion interposed between the magnetic layer pieces.

We disclose a chemical sensing device for detecting a fluid. The sensing device comprises: at least one substrate region comprising at least one etched portion; a dielectric region formed on the at least one substrate region, the dielectric region comprising at least one dielectric membrane region adjacent to the at least one etched portion; an optical source for emitting an infra-red (IR) signal; an optical detector for detecting the IR signal emitted from the optical source; one or more further substrates formed on or under the dielectric region, said one or more further substrates defining an optical path for the IR signal to propagate from the optical source to the optical detector. At least one of the optical source and optical detector is formed in or on the dielectric membrane region.

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.