System for quantum energy storage can include a quantum information engine including topological insulator having at least one edge. A coherence capacitor can include nuclei of atoms within the topological insulator, and each nucleus can have a spin direction. An energy source can be electrically connected to the topological insulator and configured to supply a current along the at least one edge of the topological insulator. The current can interact with at least one nucleus of the nuclei to flip a spin direction of the at least one nucleus. Methods for quantum energy storage, systems and methods for storing and using quantum energy, quantum information engines, and quantum heat engines are also disclosed.

System for storing and using energy quantum mechanically includes an electronic device that produces heat while operating. A quantum heat engine can be in thermal contact with and electrically connected to the electronic device. The heat produced by the electronic device can dissipate to the quantum heat engine. The quantum heat engine can induce a current to bias the electronic device. Methods for storing and using memory resource to convert heat into electrical work, coherence capacitors, methods for quantum energy storage, and quantum heat engines, are also disclosed.

A spin current-electric current conversion structure using a material containing 5d-transition metal has low efficiency of spin current-electric current conversion; therefore, a spin current-electric current conversion structure according to an exemplary aspect of the present invention includes a 4d-transition metal oxide structure consisting primarily of an oxide containing a 4d-transition-metal element; a spin current input-output structure configured to allow a spin current to flow into and out in a direction perpendicular to a plane of the 4d-transition metal oxide structure; and an electric current input-output structure configured to allow an electric current to flow into and out, the electric current conducting in an in-plane direction of the 4d-transition metal oxide structure.

A spin control mechanism includes a spin portion and a first channel portion. The spin portion has a magnetic moment that can be reversed and rotated. The first channel portion is provided in contact with the spin portion, and is configured from ferromagnetic insulator. Then, the spin control mechanism controls a direction of the magnetic moment of the spin portion using a spin current generated by a temperature gradient provided to the first channel portion.

When a magnetic field is applied parallel to a layer of thermoelectric material, and an electric field is applied perpendicular to the layer, electrical carriers in the layer follow cyclotron orbits interrupted by one of the layer's surfaces. These interrupted orbits produce a drift current along the layer and perpendicular to both fields. Therefore, the inputs are a magnetic field and an electric field, and the output is a current. The phenomenon differs from the classical Hall Effect in which the inputs are a magnetic field and a current and the output is a voltage. The output current produces electrical energy which can be used immediately, stored for later consumption, converted to another form or transmitted to another location. Layers can be stacked, each layer of the stack mutually reinforcing the electrical field in the adjacent stack layers. Stacked layers can be connected in series or parallel.

An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a thermal conductivity based gas sensor having an electrically resistive sensor element located on the major surface for exposure to a gas to be sensed. The integrated circuit further includes a barrier located on the major surface for inhibiting a flow of the gas across the sensor element.

Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

A method for manufacturing a power generation element that does not require a temperature difference between electrodes in converting thermal energy into electric energy includes a first electrode forming process of forming a first electrode, an intermediate portion forming process of forming, on the first electrode, an intermediate portion including an insulating layer being in a solid state, and a second electrode forming process of forming a second electrode having a work function different from a work function of the first electrode. The intermediate portion includes nanoparticles fixed in a dispersed state in the insulating layer.

A method for manufacturing a power generation element that does not require a temperature difference between electrodes in converting thermal energy into electric energy includes a first electrode forming process of forming a first electrode, an intermediate portion forming process of forming, on the first electrode, an intermediate portion including an insulating layer being in a solid state, and a second electrode forming process of forming a second electrode having a work function different from a work function of the first electrode. The intermediate portion includes nanoparticles fixed in a dispersed state in the insulating layer.

A thermoelectric conversion element includes a thermoelectric conversion sheet possessing flexibility. The thermoelectric conversion sheet includes a magnetic layer, an electricity-generating layer that is formed on the magnetic layer so as to contact with the magnetic layer and that is formed of a material exhibiting spin orbit coupling, and a first electrode and a second electrode formed on the electricity-generating layer so as to contact with the electricity-generating layer. The first electrode and the second electrode extend in a longitudinal direction of the thermoelectric conversion sheet, and are separated from each other in a first direction perpendicular to the longitudinal direction.