A thermoelectric conversion apparatus includes a substrate, and a power generation part formed on the substrate for generating a thermoelectric power. The power generation part includes a magnetic layer with magnetization and an electrode layer including a material exhibiting a spin-orbit interaction and formed on the magnetic layer. The substrate and the power generation part have flexibility, respectively. The thermoelectric conversion apparatus further includes a cover layer having flexibility and formed on the substrate so as to cover at least the power generation part. The magnetic layer includes magnetic layer pieces separated in a layer direction with a gap portion interposed between the magnetic layer pieces.

Thermoelectric devices are provided. In one embodiment, a thermoelectric device may include a glass wafer defined by conductive vias, a second wafer, and a plurality of metal film disposed between the glass wafer and the second wafer and against solid, conductive, integral, end surfaces of the conductive vias. A nanogap may be disposed between the metal film and the second wafer. The nanogap may have been created by applying a voltage extending between the conductive vias and the second wafer. Methods of forming the devices, along with methods of using the devices to transform heat energy to electricity, and for refrigeration, are also provided.

Disclosed is a spin thermoelectric device comprising: a transparent base material; and a plurality of spin thermoelectric elements and a plurality of electrode pads which are provided on the base material, wherein the spin thermoelectric element comprises a thermoelectric layer formed by a sol-gel method and made of a material that shows a spin Seebeck effect caused by a temperature gradient based on a heat source, and an electrode layer formed on the thermoelectric layer. The spin thermoelectric device is applicable to cladding of building, a greenhouse, etc. and used as a light source for lighting and a heat source for cooling/heating in such a manner that it transmits light and is charged with electricity when there is sunlight or there is difference in temperature between the inside of the building and the outside and it discharges electricity when there is no sunlight or there are no differences in temperature between the inside of the building and the outside.

A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavity. The cavity may be formed under an electronic device in the semiconductor substrate. The cavity is formed in the substrate by performing a first cavity etch followed by repeated cycles of polymer deposition, cavity etch, and polymer removal.

[Object] To increase the degree of freedom in designing a system for taking out power from a temperature gradient in terms of a thermoelectric conversion element or a thermoelectric conversion device. [Means for Achieving Object] A thermal spin-wave spin current generating member made of a magneto-dielectric body is provided with an inverse spin Hall effect member, a temperature gradient is provided in the above-described thermal spin-wave spin current generating member in the direction of the thickness, and at the same time a magnetic field is applied to the above-described inverse spin Hall effect member in the direction perpendicular to the longitudinal direction and perpendicular to the direction of the above-described temperature gradient by means of a magnetic field applying means so that a thermal spin-wave spin current is converted to a voltage which is taken out in the above-described inverse spin Hall effect member.

A thermally controllable energy generation system comprising an insulated, thermally-enhanced generator with a power circuit for conveying power. The thermally enhanced generator and its available voltage is controlled by a circuit which changes the ambient temperature of the generator through the use of a heating element and heating circuit. A controller circuit is in communication with the temperature sensor, the control circuit, the heating circuit and the power circuit. The thermally enhanced generator includes at least one cell, which comprises a layer of electron-rich donor material in contact with a layer of hole-rich acceptor material, sandwiched between an anode and a cathode. One of the layers is a stabilized mixture of carbon and an ionic material (carbon matrix) and the other layer is a stabilized oxide mixed with an ionic material (oxide matrix).

Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between on and off states by controlling an in-plane magnetization orientation of the magnetic insulator. In the on state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the off state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.

Concerning a thermoelectric conversion element, it is desired to provide a new spin current to charge current conversion material. A thermoelectric conversion element includes a magnetic layer possessing in-plane magnetization, and an electromotive layer magnetically coupled to the magnetic layer. The electromotive layer is formed of a carbon material, possesses anisotropy of electric conductivity, and further includes an additive.

A cavity is formed in a semiconductor substrate wherein the width of the cavity is greater than the depth of the cavity and wherein the depth of the cavity is non uniform across the width of the cavity. The cavity may be formed under an electronic device in the semiconductor substrate. The cavity is formed in the substrate by performing a first cavity etch followed by repeated cycles of polymer deposition, cavity etch, and polymer removal.

A thermoelectric cooler assembly comprises a cold plate, a first thermoelectric cooler, and a second thermoelectric cooler. The cold plate has a first side and a second side. The first thermoelectric cooler is in thermal communication with the first side of the cold plate, and the second thermoelectric cooler is in thermal communication with the second side of the cold plate. A heat exchanger assembly is also disclosed.