An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

Provided are an exterior body and an abnormality detector capable of suppressing bulking even when a heat generation detection function is provided. The exterior body of an electronic device generates heat during operation and is characterized by being provided with a magnetic body that is at least a portion of the exterior body, that has spontaneous magnetization, and that generates an electromotive force by exhibiting an abnormal Nernst effect through heat generation of the electronic device, wherein an electrode for extracting power is provided to the magnetic body.

A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

A thermoelectric cell includes a thermoelectric body including heat-utilizing power generating elements in each of which a thermoelectric conversion layer and a solid electrolyte layer are layered, and converting thermal energy into electrical energy, a conductive case including a first case body and a second case body which are combined in an insulated state and accommodating the thermoelectric body, an insulating member electrically insulating the first case body or the second case body and the solid electrolyte layer on a side surface of the thermoelectric body while electrically insulating the first case body and the second case body, and a compressible conductor accommodated in the case and compressed by being sandwiched between the thermoelectric body and the case. The first case body, the thermoelectric body, and the second case body are electrically connected in a stacked direction.

An object of the present invention is to provide a bolometer thin film and an infrared sensor having a high TCR value, and a method for manufacturing the same. According to the present invention, a bolometer material which is a thin film comprising semiconducting carbon nanotubes and a negative thermal expansion material, and an infrared sensor comprising the bolometer material are provided.

An object of the present invention is to provide a stable thermoelectric battery. The object can be solved by a thermoelectric battery comprising a working electrode containing a n-type silicon and germanium, a counter electrode, and a solid electrolyte having a polymer having a specific repeating unit with a molecular weight of 200 to 1,000,000, or a derivative thereof, wherein the solid electrolyte contains copper ions or iron ions as an ion source.

A cooling system includes a controller, a plurality of sensor sub-units, a plurality of solid-state cooling sub-units and a heat exchanger. The sensor sub-units are configured to be thermally connected to a heat source. The heat source has a plurality of sub-regions that correspond with each of the sensor sub-units. Each solid-state cooling sub-unit corresponds with and thermally connects to one of the sensor sub-units and is configured to dissipate heat from the sub-regions of the heat source. The heat exchanger is configured to dissipate heat from the sub-regions of the heat source and waste heat. The controller, based on temperatures sampled from the plurality of sensor sub-units and predictions made by an optimizer, is configured to determine the one or more sub-regions of the heat source to cool.

One or more devices, systems, apparatuses, methods of manufacture and/or methods of use to facilitate thermal sensing in a field related to thermal radiation are envisioned. In one embodiment, an ionic thermoelectric thermal radiation sensor, comprises a substrate, an ionic thermoelectric sensing unit arranged on the substrate and comprising ionically conductive and electrically insulating material, wherein the ionic thermoelectric sensing unit is a voltage-producing unit having first and second surfaces spaced apart from and disposed opposite to one other, wherein the ionic thermoelectric sensing unit produces voltage via thermal diffusion of ions or via the Soret effect under a temperature difference between the first and second surfaces, a thermal radiation absorber that generates heat when exposed to thermal radiation, and one or more electrical connectors that connect the first and second surface.

[Problem] To provide a heat exchange device with which efficient electric power generation can be performed while transfer of a heat amount is maintained. [Solution] A heat exchange device comprising a heat exchange section 1 and a magnetic body 2. The heat exchange section 1 includes a first heat transmission interface 3 in contact with a heat source, and a second heat transmission interface 4 in contact with a heat bath having a temperature different from that of the heat source. The magnetic body 2 is interposed between the first heat transmission interface 3 and the second heat transmission interface 4 of the heat exchange section 1, and includes a magnetization component in a direction intersecting a heat flux produced between the first heat transmission interface 3 and the second heat transmission interface 4.

The purpose of the present invention is to make it possible to ensure a strength that allows thermoelectric evaluation to be performed even when sintering is carried out at a temperature lower than the minimum sintering temperature of a power generation layer, in a thermoelectric conversion element. For this purpose, this thermoelectric conversion element is characterized by being provided with a power generation layer and support layers including a sintered body, wherein the power generation layer is provided with a metal-magnetic insulator composite structure in which metal is formed in a net shape around a granulated magnetic body, the support layers are formed so as to be in contact with the top and bottom or the right and left of the power generation layer, and the minimum sintering temperature of the support layers is lower than the minimum sintering temperature of the power generation layer.