A thermoelectric conversion element is made of: a first material with a stoichiometric composition of Fe.sub.3X where X is a main-group or a transition element; a second material with an off-stoichiometric composition in which a composition ratio of Fe to X deviates from that of the first material; a third material obtained by substituting part of Fe sites in the first material or part of Fe sites in the second material by a main-group metal or a transition element other than X; a fourth material with a composition of Fe.sub.3M1.sub.1-xM2.sub.x (0<x<1) where M1 and M2 are different main-group elements; or a fifth material obtained by substituting part of Fe sites in the first material by a transition element other than X and substituting part of X sites in the first material by a main-group metal element other than X. The first to the fifth materials exhibit an anomalous Nernst effect.

Electrical devices with an integral thermoelectric generator comprising a spin-Seebeck insulator and a spin orbit coupling material, and associated methods of fabrication. A spin-Seebeck thermoelectric material stack may be integrated into macroscale power cabling as well as nanoscale device structures. The resulting structures are to leverage the spin-Seebeck effect (SSE), in which magnons may transport heat from a source (an active device or passive interconnect) and through the spin-Seebeck insulator, which develops a resulting spin voltage. The SOC material is to further convert the spin voltage into an electric voltage to complete the thermoelectric generation process. The resulting electric voltage may then be coupled into an electric circuit.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

An object of the present invention is to provide an infrared sensor having a high TCR value, and a method for manufacturing the infrared sensor. The infrared sensor comprises a substrate, a first electrode on the substrate, a second electrode spaced from the first electrode on the substrate, and a carbon nanotube layer electrically connected with the first electrode and the second electrode, wherein the carbon nanotube layer comprises semiconducting carbon nanotubes in an amount more than 66% by mass based on the total amount of carbon nanotubes and 60% or more of the carbon nanotubes contained in the carbon nanotube layer have a diameter within a range of 0.6 to 1.5 nm and a length within a range of 100 nm to 5 μm.

A thermoelectric cell includes a thermoelectric body including heat-utilizing power generating elements in each of which a thermoelectric conversion layer and a solid electrolyte layer are layered, and converting thermal energy into electrical energy, a conductive case including a first case body and a second case body which are combined in an insulated state and accommodating the thermoelectric body, an insulating member electrically insulating the first case body or the second case body and the solid electrolyte layer on a side surface of the thermoelectric body while electrically insulating the first case body and the second ease body, and a compressible conductor accommodated in the case and compressed by being sandwiched between the thermoelectric body and the case. The first case body, the thermoelectric body, and the second case body are electrically connected in a stacked direction by disposing the compressible conductor on a side of at least one of the first case body and the second case body.

A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

The present inventive concept relates to a thermocouple connector and a manufacturing method of the same, the manufacturing method including forming connector pins, covering the connector pins using a glass material, the sensor electrodes including a positive sensor electrode and a negative sensor electrode respectively connected to the positive terminal and the negative terminal, the positive sensor electrode being the chromel and the negative terminal being the alumel, placing the connector pins in a center of a surrounding sealing material having a hole, filling liquid ceramic material into a space of the surrounding sealing material through the hole, sealing the hole, and solidifying the liquid ceramic material. According to the present inventive concept, the connector pin is provided by using the same kind of material as a material of the thermocouple sensor, whereby output voltage error is minimized and output voltage change due to long-term use is low.

This invention prevents measurement error from becoming large in thermoelectric conversion coefficient evaluation and enhances evaluation efficiency. This invention is a physical property evaluation device for evaluating the physical properties of a plurality of solid materials formed on a substrate. The physical property evaluation device comprises an electromotive force measurement means that forms closed circuits including the individual solid materials and measures the electromotive forces occurring at the two ends of each of the solid materials, a means for producing heat flow within the individual solid materials, an external magnetic field generation means for generating a uniform magnetic field having a given intensity and direction in the vicinity of the individual solid materials, and an automation means for evaluating the physical properties of the individual solid materials using the electromotive force measurement means, heat flow production means, and external magnetic field generation means.

Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.