A method of manufacturing an organic semiconductor transistor is provided. The method incudes forming a gate insulating layer on a gate electrode, forming a source electrode and a drain electrode which are spaced apart from each other on the gate insulating layer, forming a channel layer using an organic semiconductor on a gate insulating layer on which the source electrode and the drain electrode are formed, and thermally depositing dopant molecules on the channel layer, wherein, in the thermal deposition of the dopants, the dopant molecules are thermally deposited to be spaced above a position at which each of the source electrode and the drain electrode is in contact with the channel layer, and the dopant molecules and the organic semiconductor form a material combination in which the dopant molecules diffuse in the organic semiconductor in a solid-state diffusion manner.

A thermoelectric conversion unit includes a plurality of pipes 1 and a thermoelectric conversion element. A first fluid flows through the pipe 1. The thermoelectric conversion element 2 is wound around each of the pipes 1, and generates electric power due to a temperature difference between the first fluid and a second fluid flowing outside the pipe 1. Further, the thermoelectric conversion element 2 has a sheet shape.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be structured is irradiated with a tilted reactive ion beam at a non-orthogonal angle with respect to the front side surface such that an undesired portion of the material to be structured is removed due to the irradiation with the tilted reactive ion beam while an irradiation of another portion of the material to be structured is masked by an edge of the trench.

A thermal detector including a three-dimensional structure adapted for detecting electromagnetic radiation, suspended above and thermally insulated from a substrate, including a membrane and an absorber, the latter being formed on the basis of a shape-memory alloy and being adapted to have a flat detection configuration when its temperature is less than or equal to T.sub.1 and a cooling curve configuration when its temperature is above an austenite start temperature A.sub.s.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

A cooling system includes a controller, a plurality of sensor sub-units, a plurality of solid-state cooling sub-units and a heat exchanger. The sensor sub-units are configured to be thermally connected to a heat source. The heat source has a plurality of sub-regions that correspond with each of the sensor sub-units. Each solid-state cooling sub-unit corresponds with and thermally connects to one of the sensor sub-units and is configured to dissipate heat from the sub-regions of the heat source. The heat exchanger is configured to dissipate heat from the sub-regions of the heat source and waste heat. The controller, based on temperatures sampled from the plurality of sensor sub-units and predictions made by an optimizer, is configured to determine the one or more sub-regions of the heat source to cool.

Electrical devices with an integral thermoelectric generator comprising a spin-Seebeck insulator and a spin orbit coupling material, and associated methods of fabrication. A spin-Seebeck thermoelectric material stack may be integrated into macroscale power cabling as well as nanoscale device structures. The resulting structures are to leverage the spin-Seebeck effect (SSE), in which magnons may transport heat from a source (an active device or passive interconnect) and through the spin-Seebeck insulator, which develops a resulting spin voltage. The SOC material is to further convert the spin voltage into an electric voltage to complete the thermoelectric generation process. The resulting electric voltage may then be coupled into an electric circuit.