An optical sub-assembly includes a diode submount structure, a diode mounted to the diode submount, and a thermoelectric cooler (TEC). The TEC is in thermal contact with the diode, and the diode is positioned between the diode submount structure and the TEC.

The present specification relates to a thermoelectric module protection circuit and a thermoelectric device including the same, and According to one aspect of the present specification, there is provided a thermoelectric device including: a thermoelectric module having a first surface providing a thermal stimulus to a user and a second surface opposite to the first surface, and including an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface and an electrode configured to electrically connect the N-type semiconductor and the P-type semiconductor, a power supply unit configured to output a predetermined current applied to the thermoelectric module to cause the thermoelectric module to perform a thermoelectric operation including an endothermic operation and an exothermic operation so that the thermal stimulus is provided through the first surface, a voltage monitoring unit configured to monitor an output voltage of the thermoelectric module, wherein the output voltage reflects a temperature difference between the first surface and the second surface, a voltage comparison unit configured to compare the output voltage and a reference voltage, and output an application control signal which instructs whether to apply power to the thermoelectric module to stop supplying the power to the thermoelectric module when the temperature difference is greater than or equal to a threshold value, and a power controller configured to adjust whether to apply the power to the thermoelectric module based on the application control signal.

The present specification relates to a thermoelectric module protection circuit and a thermoelectric device including the same, and According to one aspect of the present specification, there is provided a thermoelectric device including: a thermoelectric module having a first surface providing a thermal stimulus to a user and a second surface opposite to the first surface, and including an N-type semiconductor and a P-type semiconductor disposed between the first surface and the second surface and an electrode configured to electrically connect the N-type semiconductor and the P-type semiconductor, a power supply unit configured to output a predetermined current applied to the thermoelectric module to cause the thermoelectric module to perform a thermoelectric operation including an endothermic operation and an exothermic operation so that the thermal stimulus is provided through the first surface, a voltage monitoring unit configured to monitor an output voltage of the thermoelectric module, wherein the output voltage reflects a temperature difference between the first surface and the second surface, a voltage comparison unit configured to compare the output voltage and a reference voltage, and output an application control signal which instructs whether to apply power to the thermoelectric module to stop supplying the power to the thermoelectric module when the temperature difference is greater than or equal to a threshold value, and a power controller configured to adjust whether to apply the power to the thermoelectric module based on the application control signal.

Integrated circuit apparatus, and their manufacturing methods, including an integrated power transistor and thermocouple. The power transistor is constructed in a plurality of layers formed over a semiconductor substrate. The thermocouple includes a p-thermopile and an n-thermopile that are each electrically isolated from the power transistor and the semiconductor substrate while being sensitive to temperature differences within the IC resulting from operation of the power transistor. The p-thermopile includes a p-type thermoelectric body formed in a p-type one or more of the plurality of layers. The n-thermopile includes n-type thermoelectric body formed in an n-type one or more of the plurality of layers.

Integrated circuit apparatus, and their manufacturing methods, including an integrated power transistor and thermocouple. The power transistor is constructed in a plurality of layers formed over a semiconductor substrate. The thermocouple includes a p-thermopile and an n-thermopile that are each electrically isolated from the power transistor and the semiconductor substrate while being sensitive to temperature differences within the IC resulting from operation of the power transistor. The p-thermopile includes a p-type thermoelectric body formed in a p-type one or more of the plurality of layers. The n-thermopile includes n-type thermoelectric body formed in an n-type one or more of the plurality of layers.

An integrated circuit system, structure and/or component is provided that includes an integrated electrical power source in a form of a unique, environmentally-friendly energy harvesting element or component. The energy harvesting component provides a mechanism for generating autonomous renewable energy, or a renewable energy supplement, in the integrated circuit system, structure and/or component. The energy harvesting element includes a first conductor layer, a low work function layer, a dielectric layer, and a second conductor layer that are particularly configured to promote electron migration from the low work function layer, through the dielectric layer, to the facing surface of the second conductor layer in a manner that develops an electric potential between the first conductor layer and the second conductor layer. An energy harvesting component includes a plurality of energy harvesting elements electrically connected to one another to increase a power output of the electric harvesting component.

An integrated circuit system, structure and/or component is provided that includes an integrated electrical power source in a form of a unique, environmentally-friendly energy harvesting element or component. The energy harvesting component provides a mechanism for generating autonomous renewable energy, or a renewable energy supplement, in the integrated circuit system, structure and/or component. The energy harvesting element includes a first conductor layer, a low work function layer, a dielectric layer, and a second conductor layer that are particularly configured to promote electron migration from the low work function layer, through the dielectric layer, to the facing surface of the second conductor layer in a manner that develops an electric potential between the first conductor layer and the second conductor layer. An energy harvesting component includes a plurality of energy harvesting elements electrically connected to one another to increase a power output of the electric harvesting component.

Technologies for thermoelectric enhanced cooling on an integrated circuit die are disclosed. In the illustrative embodiment, one or more components are created on a top side of an integrated circuit die, such as a power amplifier, logic circuitry, etc. The one or more components, in use, generate heat that needs to be carried away from the components. A thermoelectric cooler can be created on a back side of the die in order to facilitate removal of heat from the component. In some embodiments, additional structures such as vias filled with high-thermal-conductivity material may be used to further improve the removal of heat from the component.

Technologies for thermoelectric enhanced cooling on an integrated circuit die are disclosed. In the illustrative embodiment, one or more components are created on a top side of an integrated circuit die, such as a power amplifier, logic circuitry, etc. The one or more components, in use, generate heat that needs to be carried away from the components. A thermoelectric cooler can be created on a back side of the die in order to facilitate removal of heat from the component. In some embodiments, additional structures such as vias filled with high-thermal-conductivity material may be used to further improve the removal of heat from the component.

A filter-based color imaging array that resolves N different colors detects only 1/N.sup.th of the incoming light. In the thermal infrared wavelength range, filtering loss is exacerbated by the lower sensor detectivity at infrared wavelengths than at visible wavelengths. To avoid loss due to filtering, most spectral imagers use bulky optics, such as diffraction gratings or Fourier transform interferometers, to resolve different colors. Fortunately, it is possible to avoid filtering loss without bulky optics: detect light with interleaved arrays of sub-wavelength-spaced antennas tuned to different wavelengths. An optically sensitive element inside each antenna absorbs light at the antenna's resonant wavelength. Metallic slot antennas offer high efficiency, intrinsic unidirectionality, and lower cross-talk than dipole or bowtie antennas. Graphene serves at the optically active material inside each antenna because its 2D nature makes it easily adaptable to this imager architecture.