A tactile device includes: a substrate provided with a first surface; an organic piezoelectric film arranged on the first surface side; a plurality of electrodes arranged on the first surface; and a plurality of drive circuits arranged between the substrate and the organic piezoelectric film. The plurality of electrodes includes: a common electrode arranged across a plurality of cells; and a plurality of driving electrodes respectively arranged in the plurality of cells. The plurality of drive circuits includes: a first drive circuit capable of supplying a first driving signal; and a second drive circuit capable of supplying a second driving signal. The plurality of driving electrodes includes: a first driving electrode connected to the first drive circuit; and a second driving electrode connected to the second drive circuit. The first driving electrode and the second driving electrode are arranged in each of the plurality of cells.

A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A protection layer is conformally disposed on the piezoelectric material units. A second metal bulk layer is disposed over the piezoelectric material units, and including a first part and a second part. The first part penetrating through the protection layer is disposed on the piezoelectric material units, serving as a second electrode layer. The second part is at a same level of the first part, and at least electrically connecting to the first electrode layer.

when one of two positions in a second direction intersecting the first direction is defined as a first position and the other position is defined as a second position from which the shortest distance to the partition wall is shorter than the shortest distance from the first position to the partition wall, the vibrating plate has a first portion corresponding to the first position and a second portion corresponding to the second position, and a surface of the first portion in the first direction is, in the first direction, closer than a surface of the second portion in the first direction.

A piezoelectric sensor, comprising: a stress applying layer in which a plurality of stress applying grooves extending in parallel with a first direction are formed in a predetermined region on a whole surface; and a piezoelectric layer that is layered on the stress applying layer and formed from a polymer piezoelectric material containing an optical active polymer.

A display apparatus includes a display panel configured to display an image and a sound generating device on a rear surface of the display panel. The sound generating device is configured to vibrate the display panel to generate sound. The sound generating device includes a first structure and a first passivation layer on one side of the first structure, at least a portion of the first passivation layer having a non-flat shape.

Disclosed are a piezoelectric material-based electronic device having high recognition precision for a three-dimensional shape and improved durability, and a manufacturing method thereof. The electronic device includes an anodic oxide film, a first electrode provided on an upper surface of the anodic oxide film, a second electrode provided on an a lower surface of the anodic oxide film, and a piezoelectric column made of a piezoelectric material and provided between the first electrode and the second electrode.

A overhanging device cavity structure comprises a substrate and a cavity disposed in or on the substrate. The cavity comprises a first cavity side wall and a second cavity side wall opposing the first cavity side wall on an opposite side of the cavity from the first cavity side wall. A support extends from the first cavity side wall to the second cavity side wall and at least partially divides the cavity. A device is disposed on, for example in direct contact with, the support and extends from the support into the cavity.

There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.

A flexible thin film transistor tactile sensor includes a piezoelectric semiconductor thin film channel of material whose conductivity can be electrostatically controlled connected with source and drain metals and sandwiched between bottom and top thin film insulators and at least one of a bottom and top gate metal, the sensor being supported on a flexible substrate. The piezoelectric property of the used material transduces pressure to electronic charge. The semiconductor property of the used material permits electrostatic modulation of the conductivity in TFT device architecture such that the device can be switched on and off. Transistor action provides gain for input signals, i.e., a modulation of the gate voltage induces strong current change between the source and drain, which can be leveraged to amplify the response to input pressure. The transistor forms the basis for sensor arrays, which are readily scalable to large size.

A flexible thin film transistor tactile sensor includes a piezoelectric semiconductor thin film channel of material whose conductivity can be electrostatically controlled connected with source and drain metals and sandwiched between bottom and top thin film insulators and at least one of a bottom and top gate metal, the sensor being supported on a flexible substrate. The piezoelectric property of the used material transduces pressure to electronic charge. The semiconductor property of the used material permits electrostatic modulation of the conductivity in TFT device architecture such that the device can be switched on and off. Transistor action provides gain for input signals, i.e., a modulation of the gate voltage induces strong current change between the source and drain, which can be leveraged to amplify the response to input pressure. The transistor forms the basis for sensor arrays, which are readily scalable to large size.