Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

A grid of phased array transducers includes a piezoelectric layer and a plurality of ground contact traces. The piezoelectric layer includes a first side and a second side. The plurality of ground contact traces is disposed on the first side of the piezoelectric layer along an elevational direction, where each ground contact trace of the plurality of ground contact traces extends along an azimuthal direction. Further, each phased array transducer of the grid of phased array transducers is disposed between an adjacently disposed pair of ground contact traces of the plurality of ground contact traces. Moreover, each phased array transducer includes at least a portion of at least one ground contact trace of a corresponding pair of ground contact traces, and where each phased array transducer includes a plurality of transducer elements.

A grid of phased array transducers includes a piezoelectric layer and a plurality of ground contact traces. The piezoelectric layer includes a first side and a second side. The plurality of ground contact traces is disposed on the first side of the piezoelectric layer along an elevational direction, where each ground contact trace of the plurality of ground contact traces extends along an azimuthal direction. Further, each phased array transducer of the grid of phased array transducers is disposed between an adjacently disposed pair of ground contact traces of the plurality of ground contact traces. Moreover, each phased array transducer includes at least a portion of at least one ground contact trace of a corresponding pair of ground contact traces, and where each phased array transducer includes a plurality of transducer elements.

There is disclosed a transducer and a method for generating the transducer. The transducer is formed on a substrate layer. The transducer includes a first electrode layer, a first piezoelectric layer on the first electrode layer, and a second electrode layer on the first piezoelectric layer. The first electrode layer is connected to a first electrical connector and the second electrode layer is connected to a second electrical connector. The transducer can be configured to act as an acoustic sensor or an electric potential sensor.

There is disclosed a transducer and a method for generating the transducer. The transducer is formed on a substrate layer. The transducer includes a first electrode layer, a first piezoelectric layer on the first electrode layer, and a second electrode layer on the first piezoelectric layer. The first electrode layer is connected to a first electrical connector and the second electrode layer is connected to a second electrical connector. The transducer can be configured to act as an acoustic sensor or an electric potential sensor.

A method for manufacturing a semiconductor module is provided. The method includes: providing a substrate, wherein the substrate comprises a front side and at least one semiconductor element formed on the front side; forming a shielding structure on the at least one semiconductor element; forming a piezoelectric layer on the shielding structure.

There are provided an ultrasound diagnostic apparatus and an operation method of an ultrasound diagnostic apparatus capable of performing polarization processing during the execution period of ultrasound diagnosis without affecting the image quality of an ultrasound image. In the ultrasound diagnostic apparatus and the operation method of the ultrasound diagnostic apparatus of the invention, a trigger generation circuit generates a trigger for starting polarization processing. After a trigger is given, during the execution period of ultrasound diagnosis, in a non-diagnosis period which is a period other than a period for acquiring an image of each frame and during which transmission of ultrasound waves and reception of reflected waves for performing ultrasound diagnosis are not performed, within each frame time in which an image of each frame of an ultrasound image is acquired, a control circuit performs polarization processing on a plurality of ultrasound transducers.

A micromechanical component for a sound transducer device. The micromechanical component includes a substrate, a diaphragm, at least one piezoelectric element, and at least one electrical contact connection. The diaphragm can vibrate and is connected to the substrate. The at least one piezoelectric element is disposed between the diaphragm and the substrate and is connected to the diaphragm. The at least one piezoelectric element is designed to produce and/or detect vibrations of the diaphragm in the ultrasonic range. The at least one electrical contact connection is electrically connected to the at least one piezoelectric element. The micromechanical component can be connected, using flip chip technology, to a control circuit such that the at least one piezoelectric element can be electrically connected to the control circuit by means of the at least one electrical contact connection.

A micromechanical component for a sound transducer device. The micromechanical component includes a substrate, a diaphragm, at least one piezoelectric element, and at least one electrical contact connection. The diaphragm can vibrate and is connected to the substrate. The at least one piezoelectric element is disposed between the diaphragm and the substrate and is connected to the diaphragm. The at least one piezoelectric element is designed to produce and/or detect vibrations of the diaphragm in the ultrasonic range. The at least one electrical contact connection is electrically connected to the at least one piezoelectric element. The micromechanical component can be connected, using flip chip technology, to a control circuit such that the at least one piezoelectric element can be electrically connected to the control circuit by means of the at least one electrical contact connection.