The present invention relates to an electrical component for a microelectromechanical systems (MEMS) device, in particular, but not limited to, an electromechanical actuator. In one aspect, the present invention provides an electrical component for a microelectromechanical systems device comprising: i) a substrate layer; ii) a plurality of adjacent electrical elements arranged over the substrate layer, where each electrical element is separated from a neighbouring electrical element by an intermediate region, each of the plurality of electrical elements comprising: a) a ceramic member; and b) first and second electrodes disposed adjacent the ceramic member such that a potential difference may be established between the first and second electrodes and through the ceramic member during operation; iii) a passivation layer, or a laminate of multiple passivation layers, at least partially overlying each of the plurality of electrical elements so as to provide electrical passivation between the first and second electrodes of each of the plurality of electrical elements; wherein the passivation layer, or at least an innermost layer of the laminate of passivation layers which is disposed adjacent each underlying electrical element, is discontinuous over at least one intermediate region between neighbouring electrical elements of the electrical component.

A device for determining information of a substance in a matter comprising a substrate layer; an inter-layer dielectric disposed on the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and includes a plurality of metal layers with at least one metal layer being used as an inner electrode, a sensing instrument having at least one sensing component that includes a piezoelectric layer and the inner electrode that is positioned adjacent to an inner surface of the piezoelectric layer, and at least one binding layer disposed on the inter-layer dielectric for binding the substance, wherein the sensing component allows the device to determine the information of the substance upon detecting presence of the substance at the binding layer.

A method includes receiving, by a piezoelectric stack of a transducer, a first piezoelectric voltage. The transducer has a base structure and a first layer, the base structure having a first displacement between a first portion of the base structure and the first layer. The method also includes transmitting, by the transducer, a first ultrasound frequency while receiving a first piezoelectric voltage, and receiving, by the transducer, a first bias voltage. The received first bias voltage alters the first displacement between the first portion of the base structure and the first layer, and the altered first displacement is smaller than the first displacement. The method further includes receiving, by the piezoelectric stack of the transducer, a second piezoelectric voltage to the transducer, and transmitting, by the transducer, a second ultrasound frequency while receiving the first bias voltage and the second piezoelectric voltage.

A method of manufacturing a MEMS device, the MEMS device comprising a movable Micro-Electro-Mechanical piezoelectric component and a CMOS circuit configured to be in conductive communication with the Micro-Electro-Mechanical component. A plurality of CMOS circuit layers are formed on a substrate to form the CMOS circuit, the plurality of CMOS circuit layers comprising a plurality of CMOS passivation and metallisation layers. A portion of at least one of the plurality of CMOS passivation and metallisation layers is removed in a component region of the device. One or more component region layers are formed in place of the removed portion in the component region to form the movable Micro-Electro-Mechanical piezoelectric component. The one or more component region layers are different from the portion of the at least one of the plurality of CMOS passivation and metallisation layers.

A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.

A piezoelectric film integrated device includes a substrate; an electrode provided on the substrate; a first piezoelectric element that is provided on the electrode and includes a first monocrystalline piezoelectric film and a first electrode film superimposed on the first monocrystalline piezoelectric film; and a second piezoelectric element that is provided on the first piezoelectric element and includes a second monocrystalline piezoelectric film and a second electrode film superimposed on the second monocrystalline piezoelectric film.

A semiconductor module and a method for manufacturing the same are provided. The semiconductor module includes a substrate comprising a front side and at least one semiconductor device formed on the front side, a shielding structure formed on the at least one semiconductor device, and a piezoelectric layer formed on the shielding structure.

A vibrator, a manufacturing method thereof, a haptical sensation reproduction apparatus and a vibration waveform detection method, and relates to the technical field of display. The vibrator comprises a substrate, and a piezoelectric component and a light-emitting component located on the substrate, wherein the piezoelectric component comprises an inverse piezoelectric unit, the light-emitting component comprises a direct piezoelectric unit and a light-emitting unit, and the inverse piezoelectric unit is in contact and connected with the direct piezoelectric unit. The vibrator of this solution may be disposed in a touch-control reproduction screen, the inverse piezoelectric unit in the vibrator is driven to deform to generate vibrations, and the direct piezoelectric unit in contact and connection therewith is driven to deform to generate a current to drive the light-emitting unit to emit light.

A microfluidic substrate and a manufacture method thereof, and a microfluidic panel are provided. The microfluidic substrate includes a base substrate, an acoustic wave generation device, and a first switching circuit. The acoustic wave generation device is on the base substrate and configured to emit an acoustic wave to drive a liquid droplet to move over the microfluidic substrates, the acoustic wave generation devices includes an acoustic wave driving electrode and an acoustic wave generation layer, the first switching circuit is on the base substrate, and the first switching circuit is electrically connected to the acoustic wave driving electrode and is configured to transmit an acoustic wave driving signal to the acoustic wave driving electrode, and the acoustic wave driving electrode is configured to drive the acoustic wave generation layer to generate the acoustic wave under control of the acoustic wave driving signal.

A microfluidic substrate and a manufacture method thereof, and a microfluidic panel are provided. The microfluidic substrate includes a base substrate, an acoustic wave generation device, and a first switching circuit. The acoustic wave generation device is on the base substrate and configured to emit an acoustic wave to drive a liquid droplet to move over the microfluidic substrates, the acoustic wave generation devices includes an acoustic wave driving electrode and an acoustic wave generation layer, the first switching circuit is on the base substrate, and the first switching circuit is electrically connected to the acoustic wave driving electrode and is configured to transmit an acoustic wave driving signal to the acoustic wave driving electrode, and the acoustic wave driving electrode is configured to drive the acoustic wave generation layer to generate the acoustic wave under control of the acoustic wave driving signal.