A piezoelectric actuator includes a substrate, and a first piezoelectric device and a second piezoelectric device formed at the substrate. The first piezoelectric device includes a first lower electrode, a first piezoelectric body, and a first upper electrode. The second piezoelectric device includes a second lower electrode, a second piezoelectric body, and a second upper electrode. A side surface of the first lower electrode is not covered with the first piezoelectric body, and a side surface of the second lower electrode is not covered with the second piezoelectric body. The piezoelectric actuator further includes a common electrode formed at the substrate and coupled to the first upper electrode and the second upper electrode, and an insulating layer located between the common electrode and the first lower electrode and between the common electrode and the second lower electrode.

A piezoelectric actuator includes a substrate, and a first piezoelectric device and a second piezoelectric device formed at the substrate. The first piezoelectric device includes a first lower electrode, a first piezoelectric body, and a first upper electrode. The second piezoelectric device includes a second lower electrode, a second piezoelectric body, and a second upper electrode. A side surface of the first lower electrode is not covered with the first piezoelectric body, and a side surface of the second lower electrode is not covered with the second piezoelectric body. The piezoelectric actuator further includes a common electrode formed at the substrate and coupled to the first upper electrode and the second upper electrode, and an insulating layer located between the common electrode and the first lower electrode and between the common electrode and the second lower electrode.

A display apparatus includes a display panel configured to display an image and a sound generating device on a rear surface of the display panel. The sound generating device is configured to vibrate the display panel to generate sound. The sound generating device includes a first structure and a first passivation layer on one side of the first structure, at least a portion of the first passivation layer having a non-flat shape.

A display apparatus includes a display panel configured to display an image and a sound generating device on a rear surface of the display panel. The sound generating device is configured to vibrate the display panel to generate sound. The sound generating device includes a first structure and a first passivation layer on one side of the first structure, at least a portion of the first passivation layer having a non-flat shape.

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.

A device configured for low-energy ultrasonic 2D Fourier transform analysis, comprising: (i) a first layer comprising an array of piezoelectric pixels; (ii) a second layer comprising an array of piezoelectric pixels; (iii) a third layer, positioned between the first and second layers, comprising a bulk ultrasonic transmission medium; wherein the second layer of array of piezoelectric pixels is in the Fourier plane of an input signal of the first layer array of piezoelectric pixels.