A micropump device is formed in a monolithic semiconductor body integrating a plurality of actuator elements arranged side-by-side. Each actuator element has a first chamber extending at a distance from a first face of the monolithic body; a membrane arranged between the first face and the first chamber; a piezoelectric element extending on the first face over the membrane; a second chamber, arranged between the first chamber and a second face of the monolithic body; a fluidic inlet path fluidically connecting the second chamber with the outside of the monolithic body; and a fluid outlet opening extending in a transverse direction in the monolithic body from the second face as far as the second chamber, through the first chamber. The monolithic formation of the actuator elements and the possibility of driving the actuator elements at different voltages enable precise adjustment of flows, from very low values to high values.

Provided are a flexible body and a method for controlling the flexible body to deform. The flexible body comprises one or more flexible units, wherein each of the flexible units comprises: a first electrode, a second electrode, an electroactive polymer layer, and a thin film transistor, wherein a source electrode or a drain electrode of the thin film transistor is electrically connected to the second electrode. The first electrode and the second electrode are configured to provide an electric field acting on the electroactive polymer layer, and the electroactive polymer layer is configured to deform in response to the electric field provided by the first electrode and the second electrode.

Provided are a flexible body and a method for controlling the flexible body to deform. The flexible body comprises one or more flexible units, wherein each of the flexible units comprises: a first electrode, a second electrode, an electroactive polymer layer, and a thin film transistor, wherein a source electrode or a drain electrode of the thin film transistor is electrically connected to the second electrode. The first electrode and the second electrode are configured to provide an electric field acting on the electroactive polymer layer, and the electroactive polymer layer is configured to deform in response to the electric field provided by the first electrode and the second electrode.

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.

In one embodiment, a transducer comprises a first piezoelectric stack comprising a piezoelectric material; a first layer in contact with the piezoelectric stack; and a base structure beneath the first layer. The first layer has a first displacement between a first portion of the base structure and the first layer, and the first displacement is configurable by a first bias voltage received by the transducer.

A method of fabricating a semiconductor device includes generating a mask based on second layout data obtained by applying an OPC model to first layout data and performing a semiconductor process using the mask on a substrate, obtaining a plurality of pattern images by selecting a plurality of sample patterns from the substrate, selecting sample images corresponding to the sample patterns from each of the first layout data, the second layout data, and simulation data obtained by performing a simulation based on the second layout data, generating a plurality of input images corresponding to the sample patterns by blending the sample images corresponding to the sample patterns, respectively, and generating an error prediction model for the OPC model by training a machine learning model using a data set including the input images and the pattern images.

A method for fabricating a multi-layer resonator assembly includes sequentially fabricating a plurality of vertically-stacked resonator layers including, for each resonator layer of the plurality of resonator layers, depositing a dielectric layer, forming at least one film bulk acoustic resonator (FBAR) cavity in the deposited dielectric layer, filling each FBAR cavity of the at least one FBAR cavity with a sacrificial material block, and depositing a FBAR material stack over the at least one FBAR cavity. The deposited FBAR material stack is in contact with the sacrificial material block and the dielectric layer. The method further includes removing the sacrificial material block from the at least one FBAR cavity for each resonator layer of the plurality of resonator layers subsequent to sequentially fabricating the plurality of resonator layers.

A method for fabricating a multi-layer resonator assembly includes sequentially fabricating a plurality of vertically-stacked resonator layers including, for each resonator layer of the plurality of resonator layers, depositing a dielectric layer, forming at least one film bulk acoustic resonator (FBAR) cavity in the deposited dielectric layer, filling each FBAR cavity of the at least one FBAR cavity with a sacrificial material block, and depositing a FBAR material stack over the at least one FBAR cavity. The deposited FBAR material stack is in contact with the sacrificial material block and the dielectric layer. The method further includes removing the sacrificial material block from the at least one FBAR cavity for each resonator layer of the plurality of resonator layers subsequent to sequentially fabricating the plurality of resonator layers.

The present invention is directed to a method for manufacturing an ultrasonic fingerprint sensor by using a nanorod structure, the method including: a conductive mold generating step of generating a plurality of rod generation holes; a nanorod generating step of generating nanorods by filling the plurality of rod generation holes with a nano-piezoelectric material; a side electrode generation portion marking step of marking side electrode generation portions; a conductive mold etching step of generating nanorods and side electrodes by performing primary etching on the conductive mold; an insulating material filling step of filling portions with an insulating material; a lower electrode forming step of performing secondary etching and forming lower electrodes; a dummy substrate bonding step of bonding a dummy substrate to a surface on which the lower electrodes are formed; and an upper electrode forming step of removing the conductive substrate base and forming upper electrodes.