Embodiments of the present disclosure relate to a display substrate, a method for manufacturing the same, and a display device. The display substrate includes a substrate, a pixel definition layer for defining pixels on the substrate, the pixel definition layer including a plurality of inter-pixel portions located between adjacent pixels, and a fingerprint recognition sensor located in the inter-pixel portions.

A piezoelectric sensor includes: a lower substrate; a plurality of sensing transistors that are disposed on the lower substrate; a lower electrode that is disposed to cover the plurality of sensing transistors; a piezoelectric material layer that is disposed on the lower electrode; and an upper electrode that is disposed on the piezoelectric material layer. The piezoelectric material layer has a first thickness in a plurality of first areas in which the plurality of sensing transistors are disposed and has a second thickness which is greater than the first thickness in a second area in which the plurality of sensing transistors are not disposed. Accordingly, it is possible to further accurately and finely detect various types of biometric information.

There is provided a piezoelectric stack, including: a substrate; an output-side bottom electrode film on the substrate; an output-side piezoelectric film, being an oxide film, on the output-side bottom electrode film; an output-side top electrode film on the output-side piezoelectric film; an input-side bottom electrode film on the substrate; an input-side piezoelectric film, being a nitride film, on the input-side bottom electrode film; an input-side top electrode film on the input-side piezoelectric film; and an ultrasonic output part and ultrasonic input part placed in such a manner as not overlapping each other when viewed from a top surface of the substrate, the ultrasonic output part comprising a stacked part of the output-side bottom electrode film, the output-side piezoelectric film, and the output-side top electrode film, the ultrasonic input part comprising a stacked part of the input-side bottom electrode film, the input-side piezoelectric film, and the input-side top electrode film.

An integrated circuit is described herein that includes a semiconductor substrate. First and second piezoresistive sensors are on or in the substrate where each have a respective sensing axis extending in first and second directions respectively parallel with a surface of the substrate, where the second direction is perpendicular to the first direction. A third piezoresistive sensor is on or in the substrate and has a respective sensing axis extending in a third direction parallel with the surface of the substrate and neither parallel nor perpendicular to the first and second directions.

An ultrasonic sensor for monitoring a user's health characteristics, is flexible and close-fitting on the user's skin. The ultrasonic sensor includes a substrate, a signal transmitting layer positioned on the substrate, a signal receiving layer positioned on the substrate, and a flexible layer positioned on the signal receiving layer. The flexible layer is configured to attach to the user's skin. The signal transmitting layer includes a second electrode layer and a plurality of piezoelectric units formed on the second electrode layer. Each piezoelectric unit includes a second piezoelectric material layer formed on the second electrode layer and a conductive layer formed on the second piezoelectric material layer.

A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A method is provided for fabricating a thin-film electronic device employing a piezoelectric plate. The method provides a plurality of piezoelectric plates, and a substrate with electronic devices, each electronic device including a top surface well. A piezoelectric plate suspension is formed and flowed over the substrate. In response to the piezoelectric plate suspension flow, piezoelectric plates are captured in the top surface wells. The electric device top surface wells have well bottom surfaces, with bottom electrical contacts formed on the bottom surfaces. Thus, the capture of a piezoelectric plate in a top surface well entails interfacing a piezoelectric plate electrode, either the first electrode or the second electrode, to the bottom electrical contact. Subsequent to capturing the piezoelectric plates in the top surface wells, a thin-film process forms a conductive line overlying the exposed piezoelectric device electrode (i.e., the electrode not connected to the bottom electrical contact).