Embodiments of the present disclosure relate to a display substrate, a method for manufacturing the same, and a display device. The display substrate includes a substrate, a pixel definition layer for defining pixels on the substrate, the pixel definition layer including a plurality of inter-pixel portions located between adjacent pixels, and a fingerprint recognition sensor located in the inter-pixel portions.

An apparatus includes a dielectric tile array including a plurality of dielectric tiles; and a plurality of electroactive (EA) material blocks configured to expand or contract in response to being actuated by the application of an actuation voltage.

Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

In some embodiments, the present disclosure relates to a method in which a first set of one or more voltage pulses is applied to a piezoelectric device over a first time period. During the first time period, the method determines whether a performance parameter of the piezoelectric device has a first value that deviates from a reference value by more than a predetermined value. Based on whether the first value deviates from the reference value by more than the predetermined value, the method selectively applies a second set of one or more voltage pulses to the piezoelectric device over a second time period. The second time period is after the first time period and the second set of one or more voltage pulses differs in magnitude and/or polarity from the first set of one or more voltage pulses.

An actuator device comprises an electroactive polymer actuator (116) and a control circuit for driving the electroactive polymer actuator. The control circuit comprises a voltage boosting circuit including at least a capacitor (114; C11, C12, C13). An electroactive polymer layer (110) forms the electroactive polymer actuator in an active region (112) as well as a dielectric layer of the capacitor in a passive region (111). This provides integration of components to enable cost reductions and miniaturization.

A method and apparatus for waking a battery pack from a dormant mode via shaking. The battery pack has a piezo electric device coupled to a semiconductor control circuit providing a power path between a positive terminal of a battery cell and a boot input of an ASIC charge/discharge controller powered by the battery cell. Shaking of the piezo electric device energizes the semiconductor control circuit, which engages the power path to power the initial booting of the ASIC charge/discharge controller.

A circuit module includes a mounting substrate including a conductor wiring, an elastic wave element provided in or on a main surface of the mounting substrate, an electric element provided in or on the main surface, the electric element being different from the elastic wave element, and an insulating resin portion provided in or on the main surface to cover the elastic wave element and the electric element. The elastic wave element and the electric element are connected to each other by the conductor wiring. A height of the elastic wave element is about 0.28 mm or less, which is less than that of the electric element. The thickness of the resin portion in a region in which the resin portion covers the elastic wave element is greater than the thickness of the resin portion in a region in which the resin portion covers the electric element.

In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

A piezoelectric actuator includes: a plurality of discrete electrodes, which is disposed on one side of a piezoelectric element; a common electrode, which is disposed on the other side of the piezoelectric element; a plurality of discrete contacts, which are respectively connected to the plurality of discrete electrodes, and wherein the plurality of discrete electrodes include: a first discrete electrode; and a second discrete electrode, which is disposed at a position away from a corresponding discrete contact as compared with the first discrete electrode, wherein the common electrode includes: a first common electrode, which faces the first discrete electrode in the thickness direction; and a second common electrode, which is separated from the first common electrode in the surface direction and faces the second discrete electrode in the thickness direction, and wherein a connection wiring is provided to connect the first common electrode with the second common electrode.

An electromechanical-transducing electronic component includes at least one element array of electromechanical transducer elements. A piezoelectric material of each transducer element is made of a composite oxide having a perovskite structure preferentially oriented to at least one of (100) and (001) planes and has a drop of diffraction intensity in a rocking curve corresponding to at least one of (200) and (002) planes measured at a position (2θ=θmax) of a diffraction peak intensity P where the diffraction intensity is largest in a diffraction intensity peak corresponding to the at least one of the (200) and (002) planes out of diffraction intensity peaks measured by an X-ray diffraction θ-2θ method. ΔP/P.sub.AVE is 20% or less where P.sub.AVE represents an average of the intensity P in the element array in the piezoelectric material of each transducer element and ΔP represents a maximum difference of the intensity P in the array.