Patent classifications
H10N50/00
Skyrmion diode and method of manufacturing the same
The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.
ACTIVATION FUNCTION GENERATOR BASED ON MAGNETIC DOMAIN WALL DRIVEN MAGNETIC TUNNEL JUNCTION AND MANUFACTURING METHOD
An activation function generator based on a magnetic domain wall driven magnetic tunnel junction and a method for manufacturing the same are provided, including: a spin orbit coupling layer configured to generate a spin orbit torque; a ferromagnetic free layer formed on the spin orbit coupling layer and configured to provide a magnetic domain wall motion racetrack; a nonmagnetic barrier layer formed on the ferromagnetic free layer; a ferromagnetic reference layer formed on the nonmagnetic barrier layer; a top electrode formed on the ferromagnetic reference layer; antiferromagnetic pinning layers formed on two ends of the ferromagnetic free layer; a left electrode and a right electrode respectively formed at two positions on the antiferromagnetic pinning layers.
MAGNETOELECTRIC SPIN ORBIT LOGIC WITH PARAMAGNETS
An apparatus is provided which comprises: a first paramagnet; a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse Rashba-Edelstein effect; a second paramagnet; a magnetoelectric layer adjacent to the second paramagnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.
SENSOR CIRCUIT, A SENSOR DEVICE AND A METHOD FOR FORMING A SENSOR CIRCUIT
A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.
THREE-DIMENSIONAL MAGNETIC FIELD DETECTION ELEMENT AND THREE-DIMENSIONAL MAGNETIC FIELD DETECTION DEVICE
The invention relates to a three-dimensional magnetic field detection device (1) which comprises three soft-magnetic bodies (21, 22) and a magnetic field detection element (3, 12, 13, 14) comprising three GSR elements. For three axial directions that are orthogonal to each other at an origin point that is the center point of measurement, the invention measures, for a first axial direction, a first-axial-direction magnetic field using two elements sandwiching the origin point, measures, for a second axial direction, a second-axial-direction magnetic field through disposing one element at the position of the origin point, and measures, for a third axial direction, a third-axial-direction magnetic field through combining the two elements for the first axial direction and the three soft-magnetic bodies and forming two crank-shaped magnetic circuits having point symmetry.
Orientation of Materials via Application of a Magnetic Field and use of Magnetically-Oriented Devices and Device Component
Discussed herein are methods of orienting one-dimensional and two-dimensional materials via the application of stationary and rotating magnetic fields. The oriented one-dimensional and two-dimensional materials may exhibit macroscopic properties, and may be employed in various measurement devices as well as thermal and electrical shielding applications or battery devices. A single 1D or 2D material may be suspended in another material such as dionized water, polymer(s), or other materials during the orientation, and the suspension may remain as a liquid or may be solidified or partially solidified to secure the oriented material(s) into place. The 1D and 2D materials that respond to the magnetic orientation may further cause other elements of the suspension to be oriented in a similar manner.
MAGNETO-ELECTRIC SPIN ORBIT (MESO) STRUCTURES HAVING FUNCTIONAL OXIDE VIAS
Magneto-electric spin orbital (MESO) structures having functional oxide vias, and method of fabricating magneto-electric spin orbital (MESO) structures having functional oxide vias, are described. In an example, a magneto-electric spin orbital (MESO) device includes a source region and a drain region in or above a substrate. A first via contact is on the source region. A second via contact is on the drain region, the second via contact laterally adjacent to the first via contact. A plurality of alternating ferromagnetic material lines and non-ferromagnetic conductive lines is above the first and second via contacts. A first of the ferromagnetic material lines is on the first via contact, and a second of the ferromagnetic material lines is on the second via contact. A spin orbit coupling (SOC) via is on the first of the ferromagnetic material lines. A functional oxide via is on the second of the ferromagnetic material lines.
Magnetic sensor and magnetic sensor manufacturing method
A magnetic sensor (1) includes: a nonmagnetic substrate (10); and a sensitive element (31) including a plurality of soft magnetic layers (105) (lower soft magnetic layer (105a) and upper soft magnetic layer (105b)) laminated on or above the substrate (10) and a conductor layer (106) laminated between the plurality of soft magnetic layers (105) and having higher conductivity than the plurality of soft magnetic layers (105). The sensitive element (31) has a longitudinal direction and a transverse direction and has uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element (31) is configured to sense a magnetic field by a magnetic impedance effect.
Magnetoresistive effect device
A high-frequency filter includes at least one magnetoresistive effect element; a first port through which a high-frequency signal is input; a second port through which a high-frequency signal is output; and a signal line.
Integrated circuit including sensor having injection molded magnetic materials having different magnetic remanences
An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor.