In order to provide a memory element configured to generate and detect monopole current, in an embodiment provided in the present disclosure is a monopole current generation detection device comprising a ferromagnetic quantum spin-ice layer, a buffer layer made of a material capable of exhibiting a quantum spin-liquid state, and a pair of electrodes disposed in contact with the buffer layer. In this device it is possible to apply a voltage between the pair of electrodes by providing a voltage application means. It is possible to generate a monopole current J.sup.m upon application of the voltage, where the monopole currents through the ferromagnetic quantum spin-ice layer and through another ferromagnetic quantum spin-ice layer that is in contact with the buffer layer on the other side of the ferromagnetic quantum spin-ice layer. Also, the monopole current can be electrically detected by providing a detection circuit to the device. In embodiments of the present disclosure, further provided is a memory element in which a buffer layer is sandwiched by two ferromagnetic quantum spin-ice layers.

A sensor circuit includes a plurality of half-bridge sensor circuits. The sensor circuit includes a sensor output value determination circuit configured to determine a sensor output value. The sensor circuit further includes an error determination circuit configured to generate an error signal based on a first half-bridge sensor signal and a second half-bridge sensor signal. The sensor circuit further includes a control circuit configured to control a selection of one of the first half-bridge sensor circuit and the second half-bridge sensor circuit for providing one of the first half-bridge sensor signal and the second half-bridge sensor signal to the sensor output value determination circuit to determine the sensor output value.

An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.

A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the second ferromagnetic region may include at least a boron-rich ferromagnetic layer positioned proximate a boron-free ferromagnetic layer.

A system and a method for the deterministic generation of magnetic skyrmions includes a magnetic strip configured to store and transport skyrmions. The magnetic strip includes one or more spatial inhomogeneities configured to generate a skyrmion at known locations when excited by a current pulse. A current pulse generator is used to inject current pulses into the magnetic strip via contact pads electrically coupled to both the current pulse generator and the magnetic strip. The system also includes a magnetic field source to apply an out-of-plane magnetic field across the magnetic strip to facilitate generation of skyrmions. Skyrmions can be generated by applying an out-of-plane magnetic field to the magnetic strip and injecting a current pulse with sufficient current density towards the spatial inhomogeneities. Once a skyrmion is generated, another current pulse with sufficient current density can be injected to move the skyrmion.

In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi.sub.2Se.sub.3, Bi.sub.xSe.sub.1-x, Bi.sub.1-xSb.sub.x, etc.) or a TI/non-magnetic metal (e.g., Bi.sub.2Se.sub.3/Ag, Bi.sub.xSe.sub.1-x/Ag, Bi.sub.1-xSb.sub.x/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.

An etching system, a solid state source for supplying an atomic specie, and a method of operating are described. The system includes: a processing chamber for treating a substrate in a gas-phase chemical environment; a substrate holder for supporting the substrate in the processing chamber; and a solid state source of an atomic specie coupled to the processing chamber, and configured to supply the atomic specie to the processing chamber when treating the substrate. The processing chamber can facilitate a gas-phase, plasma-containing or non-plasma-containing environment.

The invention relates to a directional magnetic field generator with a magnetic circuit comprising: a first vertical-axis pole end (37) arranged above a horizontal plane; and at least two second pole ends (28A to 28D) symmetrically arranged on said horizontal plane, the generator further comprising coils arranged such that each magnetic circuit portion connecting two pole ends passes inside at least one coil, these coils being suitable for being connected to circuits for circulating currents of adjustable intensity in selected directions therein.

A base element for switching a magnetization state of a nanomagnet includes a heavy-metal strip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable in an absence of an external magnetic field by a flow of electrical charge through the heavy-metal strip. A method for switching a magnetization state of a nanomagnet is also described.

Disclosed is a system (10) for generating skyrmions, including: a gun (12) including a wall-forming region (14) made from a first material, the region (14) defining an outer space (16) made from a second material different from the first material and an inner space (18) made from a third material different from the first material, the second material and the third material being magnetic materials; and a magnetization reversal device (26) that can reverse the magnetization at the interface between the region (14) and the inner space (18).