Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves so that they propagate through the body (102) towards the surface (108) and are reflected at the surface to form a standing elastic wave in the body (102), thereby generating spin waves.

In a technique for inducing local electric field controlled magnetization, despite the absence of magnetic components, there is provided a novel heterostructure, a semiconductor device thereof, or an array of semiconductor devices. The heterostructure includes a semiconductor substrate carrying a plurality of layers forming at least one heterojunction and hosting a two-dimensional electron gas layer when one of the layer of the plurality of layers is bounded to an interacting layer being a chiral or a biological macromolecule assembly.

The present invention relates to an electronic device including an input and an output, the device generating an output voltage when the input of the device is supplied, the device comprising: a conversion unit converting a spin current into a charge current having an amplitude and a sign, a spin current application unit applying a spin current to the conversion unit, a ferroelectric layer, which has a ferroelectric polarization and is arranged such that the ferroelectric polarization controls at least one among the amplitude and the sign of the charge current, and an electric field application unit suitable for applying an electric field to the ferroelectric layer to control the ferroelectric polarization.

Provided is a method of a generating a skyrmion. The method includes a step of preparing a magnetic multilayer system and a step of generating a skyrmion at a temperature of 400° C. or higher by adjusting the magnetic anisotropy value and the magnetization value of the magnetic multilayer system.

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

A magnetic sensor 1 includes: a thin film magnet 20 which is constituted by a hard magnetic material layer 103 and has magnetic anisotropy in an in-plane direction; and a sensitive part 30 including a sensitive element 31 sensing a magnetic field by a magnetic impedance effect, the sensitive element 31 being constituted by a soft magnetic material layer 105 laminated on the hard magnetic material layer 103, having a longitudinal direction and a short direction, and having uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction, in which the longitudinal direction faces in the direction of a magnetic field generated by the thin film magnet 20. The thin film magnet 20 and the sensitive element 31 are provided to constitute a magnetic circuit with a facing member provided outside to face one of magnetic poles of the thin film magnet 20.

The present invention relates to an electronic device including an input and an output, the device generating an output voltage when the input of the device is supplied, the device comprising: a conversion unit converting a spin current into a charge current having an amplitude and a sign, a spin current application unit applying a spin current to the conversion unit, a ferroelectric layer, which has a ferroelectric polarization and is arranged such that the ferroelectric polarization controls at least one among the amplitude and the sign of the charge current, and an electric field application unit suitable for applying an electric field to the ferroelectric layer to control the ferroelectric polarization.

Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.

A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current J.sub.e through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current J.sub.e off after t.sub.e seconds, where an effective field experienced by the magnetization of the ferromagnetic layer H.sub.eff is significantly dominated by and in-plane anisotropy H.sub.kx, and where M passes a hard axis by precessing around the H.sub.eff; and passing the hard axis, where H.sub.eff is dominated by a perpendicular-to-the-plane anisotropy H.sub.kz, and where M is pulled towards the new equilibrium state by precessing and damping around H.sub.eff, completing a magnetization switching.

The invention relates to a directional magnetic field generator with a magnetic circuit comprising: a first vertical-axis pole end (37) arranged above a horizontal plane; and at least two second pole ends (28A to 28D) symmetrically arranged on said horizontal plane, the generator further comprising coils arranged such that each magnetic circuit portion connecting two pole ends passes inside at least one coil, these coils being suitable for being connected to circuits for circulating currents of adjustable intensity in selected directions therein.