An apparatus is provided which comprises: a first paramagnet; a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse Rashba-Edelstein effect; a second paramagnet; a magnetoelectric layer adjacent to the second paramagnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

A device for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field along a curved or angled main path in a two-dimensional electron gas or in a thin superconducting layer, so that a different presence density is produced at electrical connections.

A magneto-impedance sensor which makes it possible to further improve the accuracy of external magnetic field measurement includes a magneto-impedance element, a detection circuit, a magneto-sensitive body wiring line and a conductive layer wiring line. The magneto-impedance element includes a magneto-sensitive body and a conductive layer adjacent to the magneto-sensitive body. The magneto-sensitive body and the conductive layer pass a current therethrough in the opposite directions. The magneto-sensitive body wiring line and the conductive layer wiring line are electrically connected to the magneto-sensitive body and the conductive layer, respectively. A detection coil and a detection circuit of the magneto-impedance element are electrically connected to each other through detecting conductive wires. At least parts of these lines are adjacent to each other and allow a current to pass therethrough in opposite directions.

An apparatus is provided which comprises: a first magnet with perpendicular magnetic anisotropy (PMA); a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse Rashba-Bychkov effect; a second magnet with PMA; a magnetoelectric layer adjacent to the second magnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.

A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis. The ferromagnetic nanomagnet has both a perpendicular-to-the-plane anisotropy H.sub.kz and an in-plane anisotropy H.sub.kx and the ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of flow of the electrical charge through the heavy-metal nanostrip includes an angle ξ with respect to the short axis of the nanomagnet.

The invention relates to a three-dimensional magnetic field detection device (1) which comprises three soft-magnetic bodies (21, 22) and a magnetic field detection element (3, 12, 13, 14) comprising three GSR elements. For three axial directions that are orthogonal to each other at an origin point that is the center point of measurement, the invention measures, for a first axial direction, a first-axial-direction magnetic field using two elements sandwiching the origin point, measures, for a second axial direction, a second-axial-direction magnetic field through disposing one element at the position of the origin point, and measures, for a third axial direction, a third-axial-direction magnetic field through combining the two elements for the first axial direction and the three soft-magnetic bodies and forming two crank-shaped magnetic circuits having point symmetry.

In one aspect, the disclosed technology relates to a magnetic device, which may be a magnetic memory and/or logic device. The magnetic device can comprise a seed layer; a first free magnetic layer provided on the seed layer; an interlayer provided on the first free magnetic layer; a second free magnetic layer provided on the interlayer; a tunnel barrier provided on the second free magnetic layer; and a fixed magnetic layer. The first free magnetic layer and the second free magnetic layer can be ferromagnetically coupled across the interlayer through exchange interaction.

A magnetic sensor 1 is provided with: a thin film magnet 20 configured with a hard magnetic material and having magnetic anisotropy in an in-plane direction; a sensitive part 30 including a sensitive element 31 configured with a soft magnetic material and disposed to face the thin film magnet 30, the sensitive element 31 having a longitudinal direction in which a magnetic flux generated by the thin film magnet 20 passes through and a short direction, having uniaxial magnetic anisotropy in a direction crossing the longitudinal direction, and sensing a change in a magnetic field; and a control layer 102 disposed on a side of the thin film magnet 20 opposite to a side of the thin film magnet 20 on which the sensitive element 31 is provided, the control layer 102 controlling the magnetic anisotropy of the thin film magnet 20 to be directed in the in-plane direction.