An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; and a magnetoelectric region, wherein the FM region is at least partially adjacent to the magnetoelectric region. An apparatus is provided which comprises: a FM region with MS property; a PZe region adjacent to the FM region; a magnetoelectric region being adjacent to the FM and PZe regions; a first electrode adjacent to the FM and PZe regions; a second electrode adjacent to the magnetoelectric region; a spin orbit coupling (SOC) region adjacent to the magnetoelectric region; and a third electrode adjacent to the SOC region.

The invention relates to a technique for inducing local electric field controlled magnetization, despite the absence of magnetic components. There is provided a novel heterostructure (100), a semiconductor device thereof, or an array of semiconductor devices. The heterostructure comprises a semiconductor substrate (102) carrying a plurality of layers forming at least one heterojunction (104) and hosting a two-dimensional electron gas layer (104B) when one of the layer of the plurality of layers is bounded to an interacting layer (106) being a chiral or a biological macromolecule assembly.

A magnetic sensor, comprising: a substrate having a groove; two conductive magnetic wires for magnetic field detection arranged adjacent and substantially parallel to one another and at least partially recessed in the groove on the substrate, the two conductive magnetic wires electrically coupled at one end; a coil surrounding the two magnetic wires; two electrodes coupled to the two conductive magnetic wires for wire energization; and two electrodes coupled to the coil for coil voltage detection.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

A method and system for generating voltage and/or current oscillations in a single magnetic layer is provided. The method comprises applying a direct voltage/current to the layer in a longitudinal direction; and developing a longitudinal voltage between a pair of longitudinal voltage leads and/or a transverse voltage between a pair of transverse voltage leads. The magnetic layer comprises a ferrimagnetic or antiferrimagnetic material having a first and second magnetic sub-lattice, wherein the first sub-lattice is a dominant sub-lattice such that the charge carriers at the Fermi energy originate predominantly from the dominant sub-lattice and the charge carriers at the Fermi energy are spin polarised. In some embodiments, the dominant current carrying sub-lattice may lack inversion symmetry.

An electromagnetic sensing device with a package substrate, a first die mounted on the package substrate, and a second die mounted on the package substrate. The first die includes a first integrated circuit and a first magnetic core formed above the first integrated circuit. The first magnetic core has a first sensing axis parallel to a planar surface of the package substrate. The second die includes a second integrated circuit and a second magnetic core formed above the second integrated circuit. The second magnetic core has a second sensing axis orthogonal to the planar surface of the package substrate.

Magneto-electric spin orbital (MESO) structures having functional oxide vias, and method of fabricating magneto-electric spin orbital (MESO) structures having functional oxide vias, are described. In an example, a magneto-electric spin orbital (MESO) device includes a source region and a drain region in or above a substrate. A first via contact is on the source region. A second via contact is on the drain region, the second via contact laterally adjacent to the first via contact. A plurality of alternating ferromagnetic material lines and non-ferromagnetic conductive lines is above the first and second via contacts. A first of the ferromagnetic material lines is on the first via contact, and a second of the ferromagnetic material lines is on the second via contact. A spin orbit coupling (SOC) via is on the first of the ferromagnetic material lines. A functional oxide via is on the second of the ferromagnetic material lines.

In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi.sub.2Se.sub.3, Bi.sub.xSe.sub.1-x, Bi.sub.1-xSb.sub.x, etc.) or a TI/non-magnetic metal (e.g., Bi.sub.2Se.sub.3/Ag, Bi.sub.xSe.sub.1-x/Ag, Bi.sub.1-xSb.sub.x/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.

Disclosed is a method of forming a doughnut-shaped skyrmion, the method including heating a local area of a vertical magnetic thin film magnetized in a first direction, which is any one of an upward direction and a downward direction, applying a magnetic field having a second direction, which is opposite the first direction, and having intensity higher than coercive force of the vertical magnetic thin film to the vertical magnetic thin film to form a first area magnetized in the second direction, applying a magnetic field having the second direction to the vertical magnetic thin film to form a second area, which is an extension of the first area, and applying a magnetic field having the first direction to the vertical magnetic thin film to form a third area magnetized in the first direction in the second area.

A STT-MRAM comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a bias voltage controlled perpendicular anisotropy of a recording layer through an interlayer interaction to achieve a lower spin-transfer switching current. The anisotropy modification layer is under an electric field along a perpendicular direction with a proper voltage between a digital line and a bit line from a control circuitry, accordingly, the energy switch barrier is reduced in the spin-transfer recording while maintaining a high thermal stability and a good retention.