A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

Systems and methods for eliminating or mitigating T-effects on Hall sensors. A system may comprise a magnet-coil arrangement for providing a relative movement therebetween to obtain a relative position, a Hall sensor for sensing the relative movement, a temperature sensor located in proximity of the Hall sensor for providing temperature sensing, and a controller having two or more channels coupled to Hall sensor and to the temperature sensor and configured to control the relative movement and to provide, based on the temperature sensing, a temperature correction input to the Hall sensor for compensating a temperature effect on the Hall sensor sensing.

A Hall element that exhibits an anomalous Hall effect includes a substrate and a thin film as a magneto-sensitive layer on the substrate, the thin film having a composition of Fe.sub.xSn.sub.1-x, where 0.5≤x<0.9. The thin film may be made of an alloy of Fe and Sn, and a dopant element. The dopant element may be a transition metal element that modulates spin-orbit coupling or magnetism. The dopant element may be a main-group element that has a different number of valence electrons from Sn and modulates carrier density. The dopant element may be a main-group element that modulates density of states.

A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.

A method for configuring a reconfigurable physical unclonable function (PUF) based on a device with spin-orbit torque (SOT) effect is provided. The disclosure uses SOT or magnetic field to change the magnetic moment. After the current or magnetic field is removed, the magnetic moment returns to the easy axis direction. Under the effect of thermal fluctuation, the magnetic moment is randomly oriented in the easy axis direction. The non-volatile devices are formed into an array, the magnetic moments of all non-volatile devices are randomly distributed after a write operation. The read state can be used as a random code to implement the reconfigurable PUF. The PUF has a simple structure and guarantees security. The random code in the disclosure may be two-state or multi-state, which is related to the number of magnetic domains of the ferromagnetic layer. A large number of challenge response pairs form a strong PUF.

A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.

The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

A spin-orbit-torque magnetization rotational element includes: a spin-orbit torque wiring layer which extends in an X direction; and a first ferromagnetic layer which is laminated on the spin-orbit torque wiring layer, wherein the first ferromagnetic layer has shape anisotropy and has a major axis in a Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends, and wherein the easy axis of magnetization of the first ferromagnetic layer is inclined with respect to the X direction and the Y direction orthogonal to the X direction on a plane in which the spin-orbit torque wiring layer extends.