A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.

The present disclosure relates to a spin-orbit torque-based switching device and a method of fabricating the same. The spin-orbit torque-based switching device of the present disclosure includes a spin torque generating layer provided with a tungsten-vanadium alloy thin film exhibiting perpendicular magnetic anisotropy (PMA) characteristics and a magnetization free layer formed on the spin torque generating layer.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

A current sensor includes: six or more bus bars; a core made of a magnetic material and having a base portion and seven or more arm portions which extend in a vertical direction from the base portion and are spaced apart from each other, and in which each of the bus bars is inserted into a gap formed between adjacent arm portions; and a main body configured to integrally hold the bus bars and the core in a state in which the bus bars and the core are insert-molded using polyphenylene sulfide (PPS) or polyphthalamide (PPA).

A Hall sensor including multiple Hall elements which have a first terminal contact and a second terminal contact and a third terminal contact, the multiple Hall elements being electrically connected in series. The first terminal contacts and the third terminal contacts of the individual Hall elements are connected to each other, and the second terminal contacts of the Hall elements are supply voltage terminals or as Hall voltage taps. A beginning of a first branch being electrically connected in series to an end of a second branch, in such a way that the direction of the current flow through the Hall elements of the first branch is counter to the direction of the current flow through the Hall elements of the second branch.

Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index Δ and a low writing current I.sub.C in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).

Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index Δ and a low writing current I.sub.C in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).

A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

A spin-current magnetization rotational element includes a spin orbit torque wiring extending in a first direction and a first ferromagnetic layer disposed in a second direction intersecting the first direction of the spin orbit torque wiring, the spin orbit torque wiring having a first surface positioned on the side where the first ferromagnetic layer is disposed, and a second surface opposite to the first surface, and the spin orbit torque wiring has a second region on the first surface outside a first region in which the first ferromagnetic layer is disposed, the second region being recessed from the first region to the second surface side.