A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

A semiconductor structure and methods of forming the semiconductor structure include a solder bump self-aligned to a through-substrate-via, wherein the solder bump and the through-substrate-via are formed of a conductive metal material, and wherein the through-substrate-via is coupled to a buried metallization layer, which is formed of a different conductive metal material.

A device for determining the parameters of strip-type superconductors includes a generator, a generator frequency-setting element, an inductance coil connected to the generator, a receiver, a receiver frequency-setting element, and an inductance coil connected to the receiver. The generator and receiver frequency-setting elements are same type narrow-band elements. The pass bands of the generator and receiver frequency-setting elements coincide through at least half of the bandwidth of the frequency-setting element having a narrower band pass width. The generator and receiver inductance coils are arranged with a gap between the same, making it possible for a strip-type superconductor to be placed between the inductance coils. The device is provided with a temperature sensor comprising a thermistor in contact with the superconductor. The device enables highly accurate and reproducible measurement results.

A set of superconducting devices is interconnected in a lattice that is fabricated in a single two-dimensional plane of fabrication such that a superconducting connection can only reach a first superconducting device in the set while remaining in the plane by crossing a component of a second superconducting device that is also located in the plane. A superconducting coupling device having a span and a clearance height is formed in the superconducting connection of the first superconducting device. A section of the superconducting coupling device is separated from the component of the second superconducting device by the clearance in a parallel plane. A potential of a first ground plane on a first side of the component is equalized with a second ground plane on a second side of the component using the superconducting coupling device.

The present invention relates to a one-electrode cell and series of two or more cells as a device at temperatures from below to above room temperature comprising a very high permittivity ferroelectric. In a device constituted by one or more ferroelectricity-induced superconductor cells, the cells do not have to be in physical contact with one another; one terminal can be connected to a first cell and the other connected to a third cell without physical contact between any of the three cells. With the spontaneous and dynamic alignment of the dipoles of the ferroelectric, a potential difference is induced in different points of the surface of the cell, cells or device and a current can be harvested by conductor-terminals. The present invention can be used for contactless charging of energy storage devices and as a part of several components or products.

A signal processing circuit configured with a superconducting digital logic circuit and used for processing detection signals output from superconducting single photon detectors (SSPDs) includes transmission paths connected to the SSPDs on a one-to-one basis, a branching unit causing each of the transmission paths to branch into a first transmission path and a second transmission path, a time information generation circuit connected to the first transmission paths, and an address information generation circuit connected to the second transmission paths. The time information generation circuit outputs, based on the detection signals output from the SSPDs, a time information signal for identifying a time at which a photon is incident on the SSPDs, and the address information generation circuit outputs, based on the detection signals output from the SSPDs, an address information signal for identifying an SSPD on which a photon is incident from among the SSPDs.

A technique relates to a superconducting microwave combiner. A first filter through a last filter connects to a first input through a last input, respectively. The first filter through the last filter each has a first passband through a last passband, respectively, such that the first passband through the last passband are each different. A common output is connected to the first input through the last input via the first filter through the last filter.

A High Temperature Superconducting (HTS) Superconducting Quantum Interference Device and methods for fabrication can include at least one bi-Superconducting Quantum Interference Device. The bi-SQUID can include an HTS substrate that can be formed with a step edge. A superconducting loop of YBCO can be deposited on the step edge to establish two Josephson Junctions. A superconducting path that bi-sects the superconducting loop path can also be deposited onto the substrate. In some embodiments, the bisecting path can cross the step edge twice, and the bisecting path can be ion milled at one of the crossing points to round the bisecting path and thereby remove the fourth Josephson Junction at the other crossing point. In still other embodiments, the bisecting path can be completely on the upper shelf (or the lower shelf), and the bisecting path can be ion damaged, ion damaged, or particle damaged, to establish the third Josephson Junction.

A High Temperature Superconducting (HTS) Superconducting Quantum Interference Device and methods for fabrication can include at least one bi-Superconducting Quantum Interference Device. The bi-SQUID can include an HTS substrate that can be formed with a step edge. A superconducting loop of YBCO can be deposited on the step edge to establish two Josephson Junctions. A superconducting path that bi-sects the superconducting loop path can also be deposited onto the substrate. In some embodiments, the bisecting path can cross the step edge twice, and the bisecting path can be ion milled at one of the crossing points to round the bisecting path and thereby remove the fourth Josephson Junction at the other crossing point. In still other embodiments, the bisecting path can be completely on the upper shelf (or the lower shelf), and the bisecting path can be ion damaged, ion damaged, or particle damaged, to establish the third Josephson Junction.

A technique relates to a superconducting microwave combiner. A first filter through a last filter connects to a first input through a last input, respectively. The first filter through the last filter each has a first passband through a last passband, respectively, such that the first passband through the last passband are each different. A common output is connected to the first input through the last input via the first filter through the last filter.