This application discloses a fault tolerant computation method and device for a quantum Clifford circuit with reduced resource requirement. The method includes decomposing a quantum Clifford circuit into s logic Clifford circuits and preparing auxiliary quantum states corresponding to the s logic Clifford circuits. For each logic Clifford circuit, the method further includes teleporting an input quantum state corresponding to the logic Clifford circuit to an auxiliary qubit, processing a quantum state obtained after the teleportation by the logic Clifford circuit to obtain a corresponding output quantum state; measuring a corresponding error symptom based on the input quantum state and the auxiliary quantum state; and performing error correction on the output quantum state according to the error symptom to obtain an error-corrected output quantum state.

Superconducting tunnel junctions for use in, for instance, quantum processors. In one example, a quantum processor can have at least one qubit structure. The at least one qubit structure includes a first aluminum layer, a second aluminum layer, and a crystalline dielectric layer disposed between the first aluminum layer and the second aluminum layer. The crystalline dielectric layer includes a spinel crystal structure.

A high-temperature superconducting qubit implements a quantum mechanical two-level system. The high-temperature superconducting qubit comprises a first superconductor, a second superconductor, and an overlap region. The first superconductor comprises a first high-temperature superconductor material. The second superconductor comprises a second high-temperature superconductor material. In the overlap region, at least a first section of the first surface and at least a second section of the second surface overlap, the first section and the second section are arranged in parallel at a distance corresponding to a predefined distance, and the first orientation and the second orientation are arranged with an angle corresponding to a predefined angle. The high-temperature superconducting qubit comprises a Josephson junction between the first high-temperature superconductor material and the second high-temperature superconductor material. The Josephson junction provides the quantum mechanical two-level system of the high-temperature superconducting qubit.

A multiple functioning superconductive device was invented based on Toroidal Josephson Junction (FFTJJ) array with 3D-cage structure self-assembled organo-metallic superlattice membrane. The device not only mimics the structure and function of an activated Matrix Metalloproteinase-2 (MMP-2) protein, but also mimics the cylinder structure of the Heat Shock Protein (HSP60) protein, that works at room temperature under a normal atmosphere, and without external electromagnetic power applied. The device enabled direct rapid real-time monitoring atto-molarity concentration ATP in biological specimens and was able to define the anti-inflammatory and pro-inflammatory status revealed a transitional range of ATP concentration under antibody-free, tracer-free and label-free conditions.

A multiple functioning superconductive device was invented based on Toroidal Josephson Junction (FFTJJ) array with 3D-cage structure self-assembled organo-metallic superlattice membrane. The device not only mimics the structure and function of an activated Matrix Metalloproteinase-2 (MMP-2) protein, but also mimics the cylinder structure of the Heat Shock Protein (HSP60) protein, that works at room temperature under a normal atmosphere, and without external electromagnetic power applied. The device enabled direct rapid real-time monitoring atto-molarity concentration ATP in biological specimens and was able to define the anti-inflammatory and pro-inflammatory status revealed a transitional range of ATP concentration under antibody-free, tracer-free and label-free conditions.

A method for providing an electric waveform at a cryogenic temperatures includes providing an optical signal, which comprises an optical waveform, guiding the optical signal into a cryogenic chamber, and converting the optical waveform of the optical signal into an electric waveform inside the cryogenic chamber.

A method of producing a quantum conveyor includes: forming a pair of screening gate electrodes in or on a semiconductor substrate and that extend between a first stationary quantum dot and a second stationary quantum dot, the pair of screening gate electrodes configured to delimit a channel of moveable quantum dots between the first stationary quantum dot and the second stationary quantum dot; forming, via a lithography process, a plurality of first planar transfer electrodes above the semiconductor substrate and that extend transverse to the channel of moveable quantum dots; and forming, via a self-aligned damascene process, a plurality of second planar transfer electrodes laterally interleaved with the first planar transfer electrodes, wherein the first planar transfer electrodes and the second planar transfer electrodes are configured to transfer quantum information between the first stationary quantum dot and the second stationary quantum dot through the channel of moveable quantum dots.

A method of producing a quantum conveyor includes: forming a pair of screening gate electrodes in or on a semiconductor substrate and that extend between a first stationary quantum dot and a second stationary quantum dot, the pair of screening gate electrodes configured to delimit a channel of moveable quantum dots between the first stationary quantum dot and the second stationary quantum dot; forming, via a lithography process, a plurality of first planar transfer electrodes above the semiconductor substrate and that extend transverse to the channel of moveable quantum dots; and forming, via a self-aligned damascene process, a plurality of second planar transfer electrodes laterally interleaved with the first planar transfer electrodes, wherein the first planar transfer electrodes and the second planar transfer electrodes are configured to transfer quantum information between the first stationary quantum dot and the second stationary quantum dot through the channel of moveable quantum dots.

A quantum device is fabricated by forming a network of nanowires oriented in a plane of a substrate to produce a Majorana-based topological qubit. The nanowires are formed from combinations of selective-area-grown semiconductor material along with regions of a superconducting material. The selective-area-grown semiconductor material is grown by etching trenches to define the nanowires and depositing the semiconductor material in the trenches. A side gate is formed in an etched trench and situated to control a topological segment of the qubit.

An electronic device includes a first surface and a second surface opposite the first surface and intended to connect a first electronic component to a second electronic component located on the first surface by at least one conductor track, the conductor track including a plurality of sections disposed one after the other in such a way as to form the conductor track, each section being constituted of a superconducting material chosen in such a way as to form with the section that follows it, if such a section exists, and the section that precedes it, if such a section exists, an acoustic mismatching interface (or Kapitza interface).