A device structure includes a parallel connection of capacitor-switch assemblies located over a substrate. The capacitor-switch assemblies include a first capacitor-switch assembly that includes a first series connection of a first capacitor and a first non-Ohmic switching device, which has a first threshold voltage and includes a first primary switch electrode, a first secondary switch electrode, and a first non-Ohmic switching material portion. The capacitor switch assemblies further include a second capacitor-switch assembly that includes a second series connection of a second capacitor and a second non-Ohmic switching device, which has a second threshold voltage and includes a second primary switch electrode, a second secondary switch electrode, and a second non-Ohmic switching material portion. The second threshold voltage is different from the first threshold voltage. The non-Ohmic switching devices may be conditionally turned on depending on a magnitude of applied voltage spikes.

A method of integrating a phase change switch (PCS) into a Bipolar (Bi)/Complementary Metal Oxide Semiconductor (CMOS) (BiCMOS) process, comprises providing a base structure including BiCMOS circuitry on a semiconductor substrate, and forming on the base structure a dielectric contact window layer having metal through-plugs that contact the BiCMOS circuitry. The method includes constructing the PCS on the contact window layer. The PCS includes: a phase change region, between ohmic contacts on the phase change region, to operate as a switch controlled by heat. The method further includes forming, on the contact window layer and the PCS, a stack of alternating patterned metal layers and dielectric layers that interconnect the patterned metal layers, such that the stack connects a first of the ohmic contacts to the BiCMOS circuitry and provides connections to a second of the ohmic contacts and to the resistive heater.

A flexible sensor includes a main substrate having flexibility, a transistor over the main substrate, a support substrate over the transistor, wherein the support substrate has flexibility and at least an outer surface of the support substrate comprises a material having electric insulation, and a variable resistance part over a first surface which is an upper surface of the support substrate, in which a resistance value of the variable resistance part changes according to strain of the variable resistance part.

A flexible sensor includes a main substrate having flexibility, a transistor over the main substrate, a support substrate over the transistor, wherein the support substrate has flexibility and at least an outer surface of the support substrate comprises a material having electric insulation, and a variable resistance part over a first surface which is an upper surface of the support substrate, in which a resistance value of the variable resistance part changes according to strain of the variable resistance part.

A hybrid MOS-PCM IC switch utilizes both MOS transistors and groups of parallel-connected Phase-Change Material (PCM) cells to control signal transmissions. The MOS transistors are separated by PCM cell groups, and the PCM cells are configured to generate similar C.sub.OFF or lower values as the MOS transistors, whereby the hybrid switch is both smaller and exhibits lower FOM than standard CMOS SOI switches. When switched into an open (OFF/high-resistance) state, both the PCM cells and MOS transistors function to distribute high VBSR voltages, and the MOS transistors prevent unintended phase changes (ON/OFF switching) of the PCM cells by preventing exponential current flow. In the closed (ON/conducting) state, the PCM cells facilitate lower total R.sub.ON, whereby the hybrid CMOS SOI switch achieves improved FOM. The MOS transistors may also function as drivers during programming (switching) of direct-heating-type PCM cells.

An RRAM structure includes a bottom electrode, a resistive switching layer, a top electrode, a spacer and a conductive line. The bottom electrode is a first cylinder. The resistive switching layer includes a second cylinder and a three-dimensional disk. A first bottom of the second cylinder directly contacts a top surface of the three-dimensional disk. The top electrode is a third cylinder. The third cylinder includes a top base, a second bottom base and a sidewall. The first cylinder is embedded within the second cylinder and the three-dimensional disk. The second cylinder is embedded within the third cylinder and the second bottom base of the third cylinder directly contacts the top surface of the three-dimensional disk. The spacer surrounds and directly contacts a side surface of the three-dimensional disk. The conductive line encapsulates the top base and the sidewall of the third cylinder.

An RRAM structure includes a bottom electrode, a resistive switching layer, a top electrode, a spacer and a conductive line. The bottom electrode is a first cylinder. The resistive switching layer includes a second cylinder and a three-dimensional disk. A first bottom of the second cylinder directly contacts a top surface of the three-dimensional disk. The top electrode is a third cylinder. The third cylinder includes a top base, a second bottom base and a sidewall. The first cylinder is embedded within the second cylinder and the three-dimensional disk. The second cylinder is embedded within the third cylinder and the second bottom base of the third cylinder directly contacts the top surface of the three-dimensional disk. The spacer surrounds and directly contacts a side surface of the three-dimensional disk. The conductive line encapsulates the top base and the sidewall of the third cylinder.

In certain aspects, a die includes fins extending in a first direction, gates formed over the fins, wherein the gates extend in a second direction that is perpendicular to the first direction, and source/drain contact layers formed over the fins, wherein the source/drain contact layers extend in the second direction, and the gates and the source/drain contact layers are interleaved. The die also includes a first gate metal layer, a second gate metal layer, wherein the source/drain contact layers are between the first gate metal layer and the second gate metal layer in the second direction, first gate vias electrically coupling the first gate metal layer to the gates, and second gate vias electrically coupling the second gate metal layer to the gates.

In certain aspects, a die includes fins extending in a first direction, gates formed over the fins, wherein the gates extend in a second direction that is perpendicular to the first direction, and source/drain contact layers formed over the fins, wherein the source/drain contact layers extend in the second direction, and the gates and the source/drain contact layers are interleaved. The die also includes a first gate metal layer, a second gate metal layer, wherein the source/drain contact layers are between the first gate metal layer and the second gate metal layer in the second direction, first gate vias electrically coupling the first gate metal layer to the gates, and second gate vias electrically coupling the second gate metal layer to the gates.

Circuits and methods for increasing the long-term reliability and performance of phase change material (PCM) switches. To overcome the effects of electromigration damage of the resistive heater(s) of a PCM switch and of the PCM itself, and thus improve long-term performance and reliability, embodiments apply an AC control pulse of equal power to a conventional DC control pulse. An embodiment encompasses a PCM switch, including a PCM region including first and second signal ports configured to be coupled to a signal source; a resistive heater adjacent the PCM region and including first and second heater control signal ports; and a source of AC control pulses coupled to the first and second heater control signal ports, the AC control pulses having a first power profile to transform the PCM region into a low resistance state and a second power profile to transform the PCM region into a high resistance state.