Circuits and methods that provide wider bandwidth and smaller IM inductances for phase change material (PCM) based RF switch networks. The present invention recognizes that it is beneficial to consider the total high parasitic capacitance to ground of the various PCM switches in an RF switch network as constituting two or more separate capacitive contributions. This leads to several split capacitance concepts, including signal-path splitting, switch-block splitting, stacked-switch splitting, and splitting parasitic capacitances due to layout discontinuities, in which compensating impedance matching inductances are inserted between additive capacitances.

Phase change material (PCM) switches and methods of fabrication thereof that provide improved thermal confinement within a phase change material layer. A PCM switch may include a dielectric capping layer between a heater pad and the phase change material layer of the PCM switch that is laterally-confined such opposing sides of the dielectric capping layer the heater pad may form continuous surfaces extending transverse to the signal transmission pathway across the PCM switch. Heat transfer from the heater pad through the dielectric capping layer to the phase change material layer may be predominantly vertical, with minimal thermal dissipation along a lateral direction. The localized heating of the phase change material may improve the efficiency of the PCM switch enabling lower bias voltages, minimize the formation of regions of intermediate resistivity in the PCM switch, and improve the parasitic capacitance characteristics of the PCM switch.

Circuits and methods that enable stacking of phase change material (PCM) switches and that accommodate variations in the resistance of the resistive heater(s) of such switches. Stacking is enabled by providing isolation switches for the resistive heater(s) in a PCM switch to reduce parasitic capacitance caused by the proximity of the resistive heater(s) to the PCM region of a PCM switch. Variations in the resistance of the resistive heater(s) of a PCM switch are mitigated or eliminated by sensing the actual resistance of the resistive heater(s) and then determining a suitable adjusted electrical pulse profile for the resistive heater(s) that generates a precise thermal pulse to the PCM region, thereby reliably achieving a desired switch state while extending the life of the resistive heater(s) and the phase-change material.

Aspects of the present disclosure may include methods and systems for applying a first light to transition at least one trapped ion of a first quantum processing unit from a ground state to an intermediate state via a narrow quadrupole transition, applying a second light to transition the at least one trapped ion from the intermediate state to an excited state, and directing at least one photon, emitted from the trapped ion relaxing from the excited state back to the ground state, toward a second quantum processing unit to entangle the first quantum processing unit and the second quantum processing unit.

Aspects of the present disclosure may include methods and systems for applying a first light to transition at least one trapped ion of a first quantum processing unit from a ground state to an intermediate state via a narrow quadrupole transition, applying a second light to transition the at least one trapped ion from the intermediate state to an excited state, and directing at least one photon, emitted from the trapped ion relaxing from the excited state back to the ground state, toward a second quantum processing unit to entangle the first quantum processing unit and the second quantum processing unit.

A reconfigurable intelligent surface is disclosed. The reconfigurable intelligent surface includes unit cells that include a bank of capacitors that is monolithically integrated into the structure of the reconfigurable intelligent surface. The bank of capacitors include a plurality of capacitors that have a high Self-Resonant Frequency (SRF). Each of the capacitors is integrated with a Phase Change Material (PCM) based switch.

A reconfigurable intelligent surface is disclosed. The reconfigurable intelligent surface includes unit cells that include a bank of capacitors that is monolithically integrated into the structure of the reconfigurable intelligent surface. The bank of capacitors include a plurality of capacitors that have a high Self-Resonant Frequency (SRF). Each of the capacitors is integrated with a Phase Change Material (PCM) based switch.

A method for manufacturing a micro phase-change actuator, a micro phase-change actuator manufactured thereby, a method for manufacturing a micro phase-change actuator array, a micro phase-change actuator array manufactured thereby, and a tactile display including the same are disclosed. The method for manufacturing the micro phase-change actuator includes a first step of selectively forming a droplet of a phase-change material on a microheater formed on a substrate; a second step of freezing the droplet selectively formed on the microheater; and a third step of forming a stretchable membrane so as to seal at least the frozen droplet.

A method for manufacturing a micro phase-change actuator, a micro phase-change actuator manufactured thereby, a method for manufacturing a micro phase-change actuator array, a micro phase-change actuator array manufactured thereby, and a tactile display including the same are disclosed. The method for manufacturing the micro phase-change actuator includes a first step of selectively forming a droplet of a phase-change material on a microheater formed on a substrate; a second step of freezing the droplet selectively formed on the microheater; and a third step of forming a stretchable membrane so as to seal at least the frozen droplet.

A device is provided. The device includes a first portion having a phase change switch device on a first substrate and a second portion having a semiconductor circuit on a second substrate. The first and second portions are bonded together. A method of manufacturing the device is also described.