A method of forming a nanoparticle includes forming a layer of semiconductor material on a substrate, forming a first layer on the semiconductor material, and etching the semiconductor layer to form the nanoparticle including the first layer on a first side of the nanoparticle and the semiconductor material on a second side of the nanoparticle.

A device for generating thrust using the dynamic Casimir effect comprising: an epitaxial stack of closely spaced parallel semiconductor laminae; and a voltage source; wherein each said semiconductor lamina is connected to said voltage source such that said voltage source can apply voltage to each semiconductor lamina.

A double-sided capacitor structure and a method for forming the same are provided. The method includes: providing a base including a substrate, capacitor contacts in the substrate, a stacked structure on a surface of the substrate, and capacitor holes penetrating through the stacked structure and exposing the capacitor contacts, and the stacked structure includes sacrificial layers and supporting layers which are alternately stacked in a direction perpendicular to the substrate; forming a first electrode layer, a first dielectric layer and a second electrode layer on inner walls of the capacitor holes; filling the capacitor holes with a first conductive material to form a first conductive filling layer; completely removing several of the sacrificial layers and/or the supporting layers to remain at least two of the supporting layers; and forming a second dielectric layer and a third electrode layer that covers a surface of the second dielectric layer.

Provided is a semiconductor device having a plurality of memory cells (MC1 and MC2), in which each of the plurality of memory cells (MC1 and MC2) includes: a memory transistor (10M) having an oxide semiconductor layer (17M) as an active layer; and a first selection transistor (10S) having a crystalline silicon layer (13S) as the active layer and connected to the memory transistor (10M) in series.

A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

Disclosed is a method for the manufacture of a CEM device comprising forming a thin film of a correlated electron material having a predetermined electrical impedance when the CEM device in its relatively conductive (low impedance) state, wherein the forming of the CEM thin film comprises forming a d- or f-block metal or metal compound doped by a physical or chemical vapour deposition with a predetermined amount of a dopant comprising a back-donating ligand for the metal.

A new semiconductor electronic principle technology and device is a fundamental change in semiconductor science and technology. the new semiconductor electronic principle guessed and Validation from reality, fully reflects the essence of semiconductor electronic devices, and correctly understand and guide the work of semiconductor electronic devices, It is revealed that the function of semiconductor electronic devices is to convert electrical signals, which are converted by the voltage applied to junctions, P-N junctions, semiconductor metal junctions or insulator metal junctions that can be formed in a variety of semiconductor materials, changing the carrier density distribution on both sides of the junctions and junctions, modulated the conductivity and resistivity of the junctions, exponential variation of the conductivity of the passive semiconductor electronic devices formed by the junction alone or in combination with the difference between the applied voltage and the transistor threshold voltage, and modulating the conductivity of the semiconductor electronic devices and completing the conversion of electrical signals; New semiconductor electronic principles, technologies, passive semiconductor electronic devices, code, software and operating systems based on conductivity change, replacing current semiconductor electronic principles, technologies, active semiconductor electronic devices, current code, software and operating systems for all semiconductor electronic technologies and devices based on current change; A new semiconductor electronic device with high stability, reliability and low power loss is invented to effectively solve the key problems such as heating of semiconductor electronic devices, to maintain normal, stable and reliable work in ambient temperature below 80? C., to reduce the cost of products, and to solve the urgent breakthrough in the fields of driverless, artificial intelligence and intelligent medicine. It relates to semiconductor electronic principle and technology, device structure and working principle, circuit design, develop new software and new operating system, device manufacture and material, product function and characteristic, belongs to semiconductor electronic technology field.

A new semiconductor electronic principle technology and device is a fundamental change in semiconductor science and technology. the new semiconductor electronic principle guessed and Validation from reality, fully reflects the essence of semiconductor electronic devices, and correctly understand and guide the work of semiconductor electronic devices, It is revealed that the function of semiconductor electronic devices is to convert electrical signals, which are converted by the voltage applied to junctions, P-N junctions, semiconductor metal junctions or insulator metal junctions that can be formed in a variety of semiconductor materials, changing the carrier density distribution on both sides of the junctions and junctions, modulated the conductivity and resistivity of the junctions, exponential variation of the conductivity of the passive semiconductor electronic devices formed by the junction alone or in combination with the difference between the applied voltage and the transistor threshold voltage, and modulating the conductivity of the semiconductor electronic devices and completing the conversion of electrical signals; New semiconductor electronic principles, technologies, passive semiconductor electronic devices, code, software and operating systems based on conductivity change, replacing current semiconductor electronic principles, technologies, active semiconductor electronic devices, current code, software and operating systems for all semiconductor electronic technologies and devices based on current change; A new semiconductor electronic device with high stability, reliability and low power loss is invented to effectively solve the key problems such as heating of semiconductor electronic devices, to maintain normal, stable and reliable work in ambient temperature below 80? C., to reduce the cost of products, and to solve the urgent breakthrough in the fields of driverless, artificial intelligence and intelligent medicine. It relates to semiconductor electronic principle and technology, device structure and working principle, circuit design, develop new software and new operating system, device manufacture and material, product function and characteristic, belongs to semiconductor electronic technology field.

A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri region more adjacent to the second region than adjacent to the first region, first and second lower electrodes disposed in the first and second regions, respectively, first and second lower support patterns disposed on outer walls of the first and second lower electrodes, respectively, an upper support pattern disposed on outer walls of the first and second lower electrodes, and being on and spaced apart from the first and second lower support patterns, a dielectric layer disposed on surfaces of the first and second lower electrodes, the first and second lower support patterns, and the upper support pattern, and an upper electrode disposed on a surface of the dielectric layer, wherein thickness of the first lower support pattern is smaller than thickness of the second lower support pattern.

A semiconductor device includes a bottom metal line and a bottom electrode disposed on a substrate, a thick inter-metal dielectric layer disposed on the bottom metal line and the bottom electrode, a first via disposed on the bottom metal line disposed in the thick inter-metal dielectric layer, a second via disposed on the first via, a top metal line disposed on the second via and overlapping the bottom metal line, a low bandgap dielectric layer disposed on the thick inter-metal dielectric layer, a hard mask layer disposed on the low bandgap dielectric layer, a top electrode disposed on the hard mask layer and overlapping the bottom electrode, and a passivation layer disposed on the top metal line and the top electrode.