An embodiment provides a deposition apparatus, including: a process chamber; a residual gas analyzer connected to the process chamber; a cleansing gas supplier connected to the process chamber; and a driver that is connected to the residual gas analyzer and the cleansing gas supplier and controls the residual gas analyzer and the cleansing gas supplier.

An embodiment provides a deposition apparatus, including: a process chamber; a residual gas analyzer connected to the process chamber; a cleansing gas supplier connected to the process chamber; and a driver that is connected to the residual gas analyzer and the cleansing gas supplier and controls the residual gas analyzer and the cleansing gas supplier.

The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.

The present disclosure provides a method and system for controlling a deposition device, relating to the field of semiconductor technology. The method for controlling a deposition device is applied to the deposition device, the deposition device includes a reaction chamber and an electrostatic chuck arranged in the reaction chamber, the electrostatic chuck carries a wafer, and the controlling method includes: obtaining a pressure value between the wafer and the electrostatic chuck; and when the pressure value exceeds a preset range, the deposition device sending out an alarm signal, and executing a cleaning operation according to a use state of the electrostatic chuck.

A method for cleaning a breathing apparatus comprising a respiratory mask, by such precleaning activity as: providing the breathing apparatus in an externally contaminated state, providing a holder for the respiratory mask having at least one curved sealing face and stretching the respiratory mask onto the holder such that a sealing lip of the respiratory mask lies on the curved sealing face and closes off an interior of the respiratory mask, and the holder with the respiratory mask may be introduced into a precleaning chamber, exposing an outer side of the respiratory mask in the precleaning chamber to at least one precleaning fluid. And, after the precleaning, the respiratory mask may be released from the holder, introducing the respiratory mask into a primary cleaning chamber and exposing the respiratory mask, including an inner side of the respiratory mask that faces the interior, to a primary cleaning fluid.

A method for cleaning a breathing apparatus comprising a respiratory mask, by such precleaning activity as: providing the breathing apparatus in an externally contaminated state, providing a holder for the respiratory mask having at least one curved sealing face and stretching the respiratory mask onto the holder such that a sealing lip of the respiratory mask lies on the curved sealing face and closes off an interior of the respiratory mask, and the holder with the respiratory mask may be introduced into a precleaning chamber, exposing an outer side of the respiratory mask in the precleaning chamber to at least one precleaning fluid. And, after the precleaning, the respiratory mask may be released from the holder, introducing the respiratory mask into a primary cleaning chamber and exposing the respiratory mask, including an inner side of the respiratory mask that faces the interior, to a primary cleaning fluid.

A hand-held drain cleaning apparatus which includes a control housing comprising an upper body portion and a lower body portion, a release valve member being movable between at least a first position wherein the release valve member prevents fluid from flowing into a first fluid passageway from a second fluid passageway, and a second position wherein fluid can flow from the second fluid passageway and into the first fluid passageway. The hand-held drain cleaning apparatus further includes a flexible, tubular member having first and second end portions, and a terminal discharge member in fluid communication with the second end portion of the tubular member.

A system includes a plurality of inlets configured to dispense a gas into an enclosure of a substrate processing system. The enclosure is separate from processing chambers of the substrate processing system that process a semiconductor substrate. The system includes a controller configured to move into the enclosure a robot arm used to transport the semiconductor substrate between the processing chambers of the substrate processing system. The controller is configured to dispense the gas into the enclosure through one or more of the inlets in response to the robot arm being moved into the enclosure of the substrate processing system.

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X≥1.