Methods for strengthening edges of a laminated glass article comprising a glass core layer positioned between a first glass clad layer and a second glass clad layer are disclosed. The methods may comprise polishing the cut edges of the laminated glass article with a slurry of polishing media applied to the edges of the laminated glass article with brushes. An edge strength of the laminated glass article is greater than or equal to about 400 MPa after polishing.

A wheel deburring device. A motor II drives an upper brush to rotate, cylinders II enable the upper brush to fall through posts III, and burrs of a front surface can be removed when the upper brush is in contact with the front surface of a wheel; a motor I enables an outer ring and a geared ring I to rotate through a belt I; a motor III enables an inner ring and a geared ring II to rotate through a belt II, directions of rotation of the inner ring and the geared ring II are opposite to that of the outer ring, and brushes are driven to rotate through a gear; and cylinders IV enable a lower brush to rise through guide posts I, and burrs of a back cavity of the wheel can be removed when the lower brush is in contact with that back cavity.

The present invention is an interface between an orbital or dual action machine and towels. The apparatus may directly connect to the orbital or dual action machine or may attach to a backing plate that is attached to the orbital or dual action machine. The quick connector is located concentric with the head of the orbital and dual action machine to provide balanced and even mechanical movement of the attached towel. The present invention provides an interface between an orbital or dual action machine and towels in order to take advantage of the mechanical action of the machines to provide faster and more efficient use of towels. An exemplary embodiment of the present invention is a towel quick connector pad having of a central opening with a retaining aperture for attaching and securing a towel.

The present invention is an interface between an orbital or dual action machine and towels. The apparatus may directly connect to the orbital or dual action machine or may attach to a backing plate that is attached to the orbital or dual action machine. The quick connector is located concentric with the head of the orbital and dual action machine to provide balanced and even mechanical movement of the attached towel. The present invention provides an interface between an orbital or dual action machine and towels in order to take advantage of the mechanical action of the machines to provide faster and more efficient use of towels. An exemplary embodiment of the present invention is a towel quick connector pad having of a central opening with a retaining aperture for attaching and securing a towel.

A brush assembly comprises a support rotatable about an axis and an annular brush essentially consisting of a brush band and an array of bristles connected thereto and projecting radially therefrom. The brush band and the bristle array extending on the support obliquely to a perpendicular to the axis of the support. Thus a longitudinal extension of the band and also the bristle array are connected to the support extending at an angle to the axis deviating from a perpendicular orientation with respect to the axis of the support.

A system and method for chemical mechanical polishing (“CMP”) pad replacement on a CMP processing tool. A platen carrier having two or more platens is positioned within a platen cleaning process module. Each platen includes a CMP pad affixed thereto, and is capable of being independently rotated during operations. When a pad requires replacement, the platen carrier rotates towards a pad tearer tool, which extends and pivots to remove the used pad from the platen as the carrier rotates. A pad tape replacement module is positioned above the CMP tool with pad tape extending from a supply roll to a recycle roll. As the pad tape transits through the module, a backing of the tape is separated and recycled. A pad disposed in the pad tape is then applied to a platen via a pressure roller.

A system and method for chemical mechanical polishing (“CMP”) pad replacement on a CMP processing tool. A platen carrier having two or more platens is positioned within a platen cleaning process module. Each platen includes a CMP pad affixed thereto, and is capable of being independently rotated during operations. When a pad requires replacement, the platen carrier rotates towards a pad tearer tool, which extends and pivots to remove the used pad from the platen as the carrier rotates. A pad tape replacement module is positioned above the CMP tool with pad tape extending from a supply roll to a recycle roll. As the pad tape transits through the module, a backing of the tape is separated and recycled. A pad disposed in the pad tape is then applied to a platen via a pressure roller.

A rear cover of an electronic device is provided. The rear cover includes a glass substrate including a first face facing a first direction, a second face facing a second direction opposite to the first direction, and at least one side face disposed between the first face and the second face, a roughness layer formed on the first face and having a first roughness, a hairline pattern formed on the roughness layer and having a second roughness, and a hard coating layer formed on the roughness layer and the hairline pattern.

A rear cover of an electronic device is provided. The rear cover includes a glass substrate including a first face facing a first direction, a second face facing a second direction opposite to the first direction, and at least one side face disposed between the first face and the second face, a roughness layer formed on the first face and having a first roughness, a hairline pattern formed on the roughness layer and having a second roughness, and a hard coating layer formed on the roughness layer and the hairline pattern.

A surface processing method for a SiC substrate includes the following processes or steps: anodizing a workpiece surface of the SiC substrate by passing a current having a current density of 15 mA/cm.sup.2 or more through the SiC substrate as an anode in the presence of an electrolyte; disposing a grinding wheel layer of a surface processing pad to the workpiece surface and selectively removing, with the grinding wheel layer, an oxide formed on the workpiece surface through anodization; and performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide formed on the workpiece surface with the grinding wheel layer.