Provided is a novel polishing composition. The polishing composition comprises a water-soluble polymer that at least comprises a vinyl alcohol-based resin of which a 4% aqueous solution has a viscosity of 15 mPa.Math.s or more at 20° C.

Methods for strengthening edges of a laminated glass article comprising a glass core layer positioned between a first glass clad layer and a second glass clad layer are disclosed. The methods may comprise polishing the cut edges of the laminated glass article with a slurry of polishing media applied to the edges of the laminated glass article with brushes. An edge strength of the laminated glass article is greater than or equal to about 400 MPa after polishing.

Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness Ra.sub.PRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 .Math.m or more.

Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction in the occurrence of a surface defect in the polished face after polishing. A composition for chemical mechanical polishing according to the present invention comprises (A) abrasive grains containing titanium nitride and (B) a liquid medium, wherein the absolute value of the zeta-potential of said (A) component in the composition for chemical mechanical polishing is 8 mV or higher.

A slurry containing abrasive grains, a liquid medium, and a salt of a compound represented by formula (1) below, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element. ##STR00001##
[In formula (1), R represents a hydroxyl group or a monovalent organic group].

A substrate processing apparatus includes a polishing section and a transport section. The polishing section has a first polishing unit, a second polishing unit, and a transport mechanism. The first polishing unit has a first polishing apparatus and a second polishing apparatus. The second polishing unit has a third polishing apparatus and a fourth polishing apparatus. Each of the first to fourth polishing apparatuses has a polishing table to which a polishing pad is mounted, a top ring, and auxiliary units that perform a process on the polishing pad during polishing. Around the polishing table, a pair of auxiliary unit mounting units for mounting the respective auxiliary units in a left-right switchable manner with respect to a straight line connecting a swing center of the top ring and a center of rotation of the polishing table is provided at respective positions symmetrical with respect to the straight line.

Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and reduce post-polishing surface defects. The chemical mechanical polishing composition contains (A) silica particles having the functional group represented by general formula (1), and (B) at least one selected from the group consisting of a carboxylic acid having an unsaturated bond and a salt thereof. (1): —COO-M+ (M+ represents a monovalent cation.)

Provided are a chemical-mechanical polishing composition and a chemical-mechanical polishing method capable of polishing a semiconductor substrate containing a conductive metal such as tungsten or cobalt flatly and at high speed as well as reducing surface defects after polishing. The composition for chemical-mechanical polishing contains (A) silica particles having a functional group represented by general formula (1) and (B) a silane compound. —COO-M+ . . . (1) (M+ represents a monovalent cation.)

The present invention provides, in polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, means that is capable of improving a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials. The present invention relates to a polishing composition used for polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, the polishing composition containing: organic acid-immobilized silica; a dispersing medium; a selection ratio improver that improves a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials; and an acid, in which the selection ratio improver is organopolysiloxane having a hydrophilic group.

The present invention provides, in polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, means that is capable of improving a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials. The present invention relates to a polishing composition used for polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, the polishing composition containing: organic acid-immobilized silica; a dispersing medium; a selection ratio improver that improves a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials; and an acid, in which the selection ratio improver is organopolysiloxane having a hydrophilic group.