Wafers are sliced from a workpiece using a wire saw during slicing operations. The wire saw has a wire web of sawing wire and a setting device. The wire web is stretched in a plane between wire guide rollers that are mounted between fixed and moveable bearings. During each of the slicing operations, the setting device feeds the workpiece through the wire web along a feed direction perpendicular to a workpiece axis and perpendicular to the plane of the wire web. During each of the slicing operations, the movable bearings move oscillatingly axialy. The feeding of the workpiece through the wire web includes a simultaneous displacement of the workpiece along the workpiece axis using the setting element in accordance with a correction profile, which includes an oscillating component that is opposite to the effect which the axial moving of the movable bearings has on the shape of the sliced-off wafers.

The disclosed system may include a slicing component that has a cutting blade. The cutting blade may be configured to cut a semiconductor wafer into multiple wafer strips, where the wafer strips have flat top surfaces and multiple edges. The system may also include a chuck that has rotatable wafer plate strips that are respectively configured to support the wafer strips. The system may further include a pivot arm that rotates the chuck from a cutting position facing the slicing component to a rotated, polishing position that faces a polishing component. As such, an exposed edge of each wafer strip faces the polishing component. The system may also include a polishing component that is configured to polish at least a portion of the exposed edge of each wafer strip that is facing the polishing component. Various other methods, systems, and computer-readable media are also disclosed.

Systems and methods for releasing semiconductor dies during pick and place operations are disclosed. In one embodiment, a system for handling semiconductor dies comprises a support member positioned to carry at least one semiconductor die releasably attached to a support substrate. The system further includes a picking device having a pick head coupleable to a vacuum source and positioned to releasably attach to the semiconductor die at a pick station. The system still further incudes a cooling member coupleable to a cold fluid source and configured to direct a cold fluid supplied by the cold fluid source toward the support substrate at the pick station. The cold fluid cools a die attach region of the substrate where the semiconductor die is attached to the substrate to facilitate removal of the semiconductor die.

In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged.

The present invention relates to a device (1) for separating at least one wafer from a donor substrate (2). The device (1) according to the invention comprises at least a housing (4) with a receiving space (6) for receiving at least one multi-layer arrangement (8) which consists of at least one donor substrate (2) and a receiving layer (10) arranged or generated thereon, and an application device (12) for the contactless application of the multi-layer arrangement (8) for generating crack-conducting stresses in the multi-layer arrangement (8).

A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.

Misting Lubricant may include the application of a liquid medium via a high-pressure mist nozzle instead of a conventional drip process. By utilizing misting lubricant, the lubricant may be evenly applied, and surface irregularities may be minimized, which may reduce or eliminate splashing. Misting lubricant may provide for a cleaner and more efficient material cutting process.

Slices are cut from workpieces using a wire saw having a wire array tensioned in a plane between two wire guide rollers each supported between fixed and floating bearings and comprising a chamber and a shell enclosing a core and having guide grooves for wires. During a cut-off operation, a workpiece is fed through the wire array perpendicular to a workpiece axis and the wire array plane. The workpiece is fed through the wire array while simultaneously: changing shell lengths by adjusting chamber temperatures in dependence on a depth of cut and a first correction profile; and moving the workpiece along the workpiece axis in accordance with a second correction profile. The correction profiles are opposed to a shape deviation.

There is provided a manufacturing method of a single-crystal silicon substrate by which the substrate is manufactured from a workpiece composed of single-crystal silicon manufactured in such a manner that a specific crystal plane included in the crystal planes {100} is exposed in each of a front surface and a back surface. The manufacturing method includes a separation layer forming step of forming separation layers including modified parts and cracks that extend from the modified parts inside the workpiece and a splitting-off step of splitting off the substrate from the workpiece with use of the separation layers as the point of origin after the separation layer forming step is executed. In the separation layer forming step, the separation layers are formed inside the workpiece composed of the single-crystal silicon by using a laser beam with such a wavelength as to be transmitted through the single-crystal silicon.