A MEMS infrared sensing device includes a substrate and an infrared sensing component. The infrared sensing component is provided above the substrate. The infrared sensing component includes a sensing plate and at least one supporting element. The sensing plate includes at least one infrared absorbing layer, an infrared sensing layer, a sensing electrode and a plurality of metallic elements. The sensing plate has a plurality of openings. The metallic elements respectively surround the openings. The sensing electrode is connected with the infrared sensing layer, and the metallic elements are spaced apart from one another. The supporting element connecting the sensing plate with the substrate.

Embodiments disclosed are systems and methods for fabricating microchannels in metal. In an embodiments, a method includes providing a first metallic plate having a first surface with an elongated slot recessed therein, providing a second metallic plate having a second surface, interfacing the first surface of the first metallic plate with the second surface of the second metallic plate with the second surface covering the elongated slot to form a microchannel between the first metallic plate and the second metallic plate, thermal bonding the first metallic plate to the second metallic plate to form a metallic body having the microchannel extending therethrough, and infiltrating the metallic body with an infiltrant.

A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.

A method for closing openings in a flexible diaphragm of a MEMS element. The method includes: providing at least one opening in the flexible diaphragm, situating sealing material in the area of the at least one opening, melting-on at least the applied sealing material in the area of the at least one opening, and subsequently cooling the melted-on material to close the at least one opening.

A first electrode of a MEMS device can be oriented lengthwise along and parallel to an axis, and can have a first end and a second end. A second electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. A third electrode can be oriented lengthwise along and parallel to the axis and can have a first end and a second end. The first, second, and third electrodes can each be located at least partially within an aperture of a plurality of apertures of a solid dielectric that can surround the second electrode second end and the third electrode first end. The second electrode first end and the third electrode second end can be located outside of the solid dielectric.

A piezoelectric microelectromechanical systems (MEMS) microphone is provided comprising a substrate including walls defining a cavity and at least one of the walls defining an anchor region, a piezoelectric film layer supported by the substrate at the anchor region; an electrode disposed over the piezoelectric film layer and adjacent the anchor region and including an edge adjacent the anchor region having two straight portions and a protruding portion between the two straight portions, and the wall of the cavity that defines the anchor region including an indent corresponding in shape to the protruding portion of the electrode. A method of manufacturing such a MEMS microphone is also provided.

The present disclosure relates to an integrated package having an active area, an electrical routing circuit, an optical routing circuit, and a vacuum vessel. Methods of making such a package are also described herein.

A method is provided for subtractively processing a layer of etchable material formed over an electrically conductive surface region of a workpiece. The workpiece is immersed in a liquid solution, generally but not exclusively a conductive solution, that comprises an etchant for the etchable material, so that etching of the etchable material is initiated. An electric circuit is connected to include a control electrode, a reference electrode, and the electrically conductive surface region of the workpiece. The electric circuit is used to monitor the development process dynamically at each of a plurality of intervals during the etching. The etching is terminated when the electrochemical signal satisfies a criterion indicating that the etching is complete.

A MEMS infrared sensing device includes a substrate and an infrared sensing element. The infrared sensing element is provided above the substrate and has a sensing area and an infrared absorbing area which do not overlap each other. The infrared sensing element includes two infrared absorbing structures, an infrared sensing layer provided between the two infrared absorbing structures, and an interdigitated electrode structure located in the sensing area. Each of the two infrared absorbing structures includes at least one infrared absorbing layer, and the two infrared absorbing structures are located in the sensing area and the infrared absorbing area. The infrared sensing layer is located in the sensing area and does not extend into the infrared absorbing area. The interdigitated electrode structure is in electrical contact with the infrared sensing layer.

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.