A device for luminescent imaging includes an array of imaging pixels, a photonic structure over the array of imaging pixels, and an array of features over the photonic structure. A first feature of the array of features is over a first pixel of the array of imaging pixels, and a second feature of the array of features is over the first pixel and spatially displaced from the first feature. A first luminophore is within or over the first feature, and a second luminophore is within or over the second feature. The device includes a radiation source to generate first photons having a first characteristic at a first time, and generate second photons having a second characteristic at a second time. The first pixel selectively receives luminescence emitted by the first and second luminophores responsive to the first photons at the first time and second photons at the second time, respectively.

A device for luminescent imaging includes an array of imaging pixels, a photonic structure over the array of imaging pixels, and an array of features over the photonic structure. A first feature of the array of features is over a first pixel of the array of imaging pixels, and a second feature of the array of features is over the first pixel and spatially displaced from the first feature. A first luminophore is within or over the first feature, and a second luminophore is within or over the second feature. The device includes a radiation source to generate first photons having a first characteristic at a first time, and generate second photons having a second characteristic at a second time. The first pixel selectively receives luminescence emitted by the first and second luminophores responsive to the first photons at the first time and second photons at the second time, respectively.

A method for manufacturing glass-based micro- and nanostructure comprising the step of dewetting a thin-film glass layer on a textured substrate to form the micro- and nanostructure from the thin-film glass layer.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×10.sup.18/cm.sup.3 of n-type impurity.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×10.sup.18/cm.sup.3 of n-type impurity.

Various embodiments may relate to an optical system. The optical system may include a lens structure configured to generate an outgoing Gaussian beam based on an incoming Gaussian beam. The optical system may also include a light source configured to provide the incoming Gaussian beam to the lens structure. The lens structure may be a flat lens or a phase plate.

There are provided a photoelectric conversion film containing a quantum dot of a compound semiconductor that contains an Ag element, at least one element selected from an Sb element or a Bi element, and at least one element selected from an Se element or a Te element; a dispersion liquid that is used in the formation of the photoelectric conversion film; a photodetector element including the photoelectric conversion film; and an image sensor including the photodetector element.

A quantum dot, a quantum dot composite including the quantum dot, a display panel including the quantum dot composite, and an electronic device including the display panel are provided. The quantum dot includes indium, zinc, phosphorus, and selenium, and does not include cadmium, and has an optical density (OD) per 1 mg for a wavelength of 450 nm of from about 0.2 to about 0.27 and an emission peak of from about 500 nm to about 550 nm, or an optical density per 1 mg for a wavelength of about 450 nm of from about 0.5 to about 0.7 and an emission peak of from about 610 nm to about 660 nm.

A quantum dot composite material, and an optical film and a backlight module using the same are provided. The quantum dot composite material includes a curable polymer and a plurality of quantum dots dispersed in the curable polymer. Based on the total weight of the curable polymer being 100%, the curable polymer includes 15 wt % to 40 wt % of monofunctional group acrylic monomer, 15 wt % to 40 wt % of multifunctional group acrylic monomer, 5 wt % to 35 wt % of mercaptan functional group monomer, 1 wt % to 5 wt % of photoinitiator, 10 wt % to 30 wt % of acrylic oligomer, and 5 wt % to 25 wt % of scattering particles.

A quantum dot, and an ink composition, a light-emitting device, an optical member, and an apparatus, each including the quantum dot. The quantum dot includes: a nanoparticle; and at least one ligand on a surface of the nanoparticle, wherein the nanoparticle does not include mercury and cadmium, and the at least one ligand includes at least two thiol groups and at least one hydrophilic group.