Disclosed is a method for purifying a main gas, in particular helium, from a source gas stream comprising the main gas, a main impurity, in particular nitrogen, and optionally another, secondary impurity, in particular oxygen, the method comprising a step of partial condensation of the gas stream in order to extract therefrom impurities in liquid form, in particular the main impurity, and to produce a gas stream enriched with main gas, characterized in that the method comprises, before the partial condensation step, a step of injecting into the gas stream a compound in which the main impurity of the gas to be treated is soluble and having a saturation vapor pressure lower than the saturation vapor pressure of the main impurity.

A separation and purification coupled process with a high helium yield and diversified products is provided. The process is as follows. Firstly, a low-concentration helium-containing gas after being pressurized and pre-treated enters a two-stage and two-section membrane separation unit to produce a helium product with a medium concentration by concentrating stage by stage through the membrane separation unit. A part of the helium with medium concentration enters an adsorption unit for further concentration to produce a helium product above grade A.

Systems, methods and related devices used to produce and collect polarized noble gas to inhibit, suppress, detect or filter alkali metal nanoclusters to preserve or increase a polarization level thereof. The systems can include a pre-sat chamber that has an Area Ratio between 20 and 500.

Systems, methods and related devices used to produce and collect polarized noble gas to inhibit, suppress, detect or filter alkali metal nanoclusters to preserve or increase a polarization level thereof. The systems can include a pre-sat chamber that has an Area Ratio between 20 and 500.

System for purifying argon by cryogenic distillation, comprising a single column surmounted by a top-end condenser, a fluid inlet in the lower part of the column, a fluid outlet in the upper part of the column, and N distillation sections where N≥4, of which at least the two uppermost sections of the column are equipped respectively with a first liquid distributor and with a second liquid distributor, the second distributor being capable of performing a function of mixing together liquids that fall onto the distributor, each of the first and second distributors being positioned above the respective section and of which the two lowermost sections of the column are respectively equipped with a (N−1)th and an Nth liquid distributor capable of performing a function of mixing together liquids that fall onto the distributor, and which is arranged above the respective section, the first, second, (N−1)th and Nth distributors each being dimensioned to contain a maximum height of liquid head, that (those) of the first and second distributors being greater than that (those) of the (N−1)th and Nth distributors.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Cavitand compositions that comprise void spaces are disclosed. The void spaces may be empty, which means that voids are free of guest molecules or atoms, or the void spaces may comprise guest molecules or atoms that are normally in their gas phase at standard temperature and pressure. These cavitands may be useful for industrial applications, such as the separation or storage of gasses. Novel cavitand compounds are also disclosed.

Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

A method for recovering helium from a feed gas mixture comprising helium, carbon dioxide and at least one of methane and nitrogen, and wherein at least a part of the feed gas mixture is subjected to a separation sequence including a membrane-based separation and an adsorption-based separation forming a helium product, wherein the the membrane based separation is performed using a first membrane separation step and a second membrane separation step, the membrane based separation and the separation sequence includes no further membrane separation steps, the adsorption based separation is performed using a pressure swing adsorption step, at least a part of the feed gas mixture is subjected to the first membrane separation step forming a first retentate and a first permeate. A corresponding arrangement is also provided.

The invention relates to a method and a system for analyzing rare gases present in a gaseous fluid (1). According to the invention, initially, the rare gases are extracted from the gaseous fluid by trapping by means of a getterizing substrate (5), then superconcentration of the rare gases is produced before injection (8) into the measuring instruments (9). By virtue of the invention, it is possible to increase the partial pressure of the rare gases in the gases to be analyzed before their injection into the analysis instruments.