The disclosure provides a II-II-VI alloy quantum dot, a preparation method and application thereof. The preparation method includes: step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster; step S2: mixing the II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot.

A method for obtaining at least one particle, including: (a) preparing solution A including at least one precursor of at least one of Si, B, P, Ge, As, Al, Fe, Ti, Zr, Ni, Zn, Ca, Na, Ba, K, Mg, Pb, Ag, V, Te, Mn, Ir, Sc, Nb, Sn, Ce, Be, Ta, S, Se, N, F, and Cl; (b) preparing aqueous solution B; (c) forming droplets of solution A; (d) forming droplets of solution B; (e) mixing droplets; (f) dispersing mixed droplets in a gas flow; (g) heating dispersed droplets to obtain the at least one particle; (h) cooling the at least one particle; and (i) separating and collecting the at least one particle. The aqueous solution is acidic, neutral, or basic. In step (a) and/or step (b) at least one colloidal suspension of a plurality of nanoparticles is mixed with the solution. Also, a device for implementing the method.

The present disclosure relates to a method for producing a porous metal oxide powder, and more particularly, to a method for producing a porous metal oxide powder including obtaining metal oxide precipitate slurry from an aqueous metal salt solution dissolving a water-soluble metal salt in water; solvent exchanging the water by mixing a butanol solvent and the metal oxide precipitate slurry; and drying the solvent exchanged metal oxide under atmospheric pressure conditions.

The invention relates to sulfonated aminomethylated chelate resins, to a method for producing same, to the use thereof for obtaining and purifying metals, in particular rare earth metals, from aqueous solutions and organic liquids, and for producing highly pure silicon.

The present invention relates to a method for preparing uniform metal oxide nanoparticles. According to the preparation method of the present invention, it is possible to maintain the temperature and pressure inside the reactor in a stable and constant manner by removing water generated in the reaction step for forming metal oxide nanoparticles. Thus, the uniformity of nanoparticles formed is increased, and the reproducibility between batches can be increased even in a repeated process and and a large-scale reaction. Therefore, the preparation method of the present invention can be used to synthesize uniform nanoparticles reproducibly in large quantities.

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

The present invention disclosed use of lactam as a solvent in the preparation of nanomaterials by precipitation method, sol-gel method or high temperature pyrolysis. These methods are able to recycle lactam solvent, which meet requirements of environmental protection.

The present invention relates to a method for producing core-shell nanocrystals consisting of a metal-containing nanocrystal core and a shell layer comprising at least one metal oxide material having variable shell thicknesses, and use of the core-shell nanocrystals for different applications.

The present invention relates to a method for producing core-shell nanocrystals consisting of a metal-containing nanocrystal core and a shell layer comprising at least one metal oxide material having variable shell thicknesses, and use of the core-shell nanocrystals for different applications.

The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.