A method for preparing a γ-Ga.sub.2O.sub.3 nanomaterial, comprising a step of treating a mixture comprising a gallium element, water, and an organic solvent with ultrasound. The preparation process and equipment requirements are simple, the cost of materials is low, there are fewer experimental parameters, and experimental conditions are mild, with no additional heat source and/or pressure being applied. The γ-Ga.sub.2O.sub.3 nanomaterial can be prepared, in kilograms or above, quickly at an ambient temperature and pressure.

Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125° C. to 175° C., and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125° C. to 175° C. for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.

A novel material and a transistor including the novel material are provided. One embodiment of the present invention is a composite oxide including at least two regions. One of the regions includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu) and the other of the regions includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). In an analysis of the composite oxide by energy dispersive X-ray spectroscopy, the detected concentration of the element M1 in a first region is less than the detected concentration of the element M2 in a second region, and a surrounding portion of the first region is unclear in an observed mapping image of the energy dispersive X-ray spectroscopy.

A raw material solution containing trivalent iron ions, or trivalent iron ions and ions of a metal element that partially substitutes Fe sites, and an alkaline aqueous solution for neutralizing the raw material solution are added to a reaction system to adjust the pH of the reaction system from 1.0 to 3.0 or lower. Hydroxycarboxylic acid is added to the obtained reaction solution and the pH of the reaction system is then neutralized from 7.0 to 10.0 or lower. The obtained precipitate of a substituent metal element-containing iron oxyhydroxide is coated with silicon oxide, followed by heating so as to form particles of ε-iron oxide in which Fe sites are partially substituted by other metal elements, and then, a slurry containing the particles is classified. The iron-based oxide magnetic powder has a particle shape close to a perfect sphere and is suitable for use in a magnetic recording medium.

Proposed are a layered compound having indium and phosphide, a nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by K.sub.1-xIn.sub.yP.sub.z (0≤x≤1.0, 0.75≤y≤1.25, 1.25≤z≤1.75).

Current sulfide solid-state electrolyte (SE) membranes utilized in all-solid-state lithium batteries (ASLBs) have a high thickness (0.5˜1.0 mm) and low ion conductance (<25 mS), which limit the cell-level energy and power densities. Based on ethyl cellulose's unique amphipathic molecular structure, superior thermal stability, and excellent binding capability, this work fabricated a freestanding SE membrane with an ultralow thickness of 47 μm. With ethyl cellulose as an effective disperser and binder, the Li.sub.6PS.sub.5Cl is uniformly dispersed in toluene and possesses superior film formability. In addition, ultralow areal resistance of 5.10 Ωcm.sup.−2 and remarkable ion conductance of 190.11 mS (one order higher than the conventional sulfide SE layer) have been achieved. The ASLB assembled with this SE membrane delivers cell-level high gravimetric and volumetric energy densities of 175 Wh kg.sup.−1 and 675 Wh L.sup.−1, individually.

This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

A novel material and a transistor including the novel material are provided. One embodiment of the present invention is a composite oxide including at least two regions. One of the regions includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu) and the other of the regions includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). In an analysis of the composite oxide by energy dispersive X-ray spectroscopy, the detected concentration of the element M1 in a first region is less than the detected concentration of the element M2 in a second region, and a surrounding portion of the first region is unclear in an observed mapping image of the energy dispersive X-ray spectroscopy.

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.