Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] M.sub.x−mA.sub.yB.sub.z (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

Proposed are a layered Group III-V arsenic compound, a Group III-V nanosheet that may be prepared using the same, and an electrical device including the materials. There is proposed a layered compound having a composition represented by [Formula 1] Mx-mAyAsz (Where M is at least one of Group I elements, A is at least one of Group III elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x).

A pharmaceutical composition is provided comprising a highly soluble arsenic carbonate and/or bicarbonate compound and which is useful in the treatment of a variety of cancers, including acute promyelocytic leukaemia. The arsenic carbonate and/or bicarbonate salt acts as a solid, and so orally deliverable, improved bioequivalent delivery form of arsenic trioxide IV solutions.

Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF.sub.3, SiF.sub.4, GeF.sub.4, PF.sub.5 or AsF.sub.5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.

Proposed are a layered Group III-V compound having ferroelectric properties, a Group III-V compound nanosheet that may be prepared using the same, and an electrical device including the materials. Proposed is a layered compound represented by [Formula 1] M.sub.x−mA.sub.yB.sub.z (M is at least one of Group I or Group II elements, A is at least one of Group III elements, B is at least one of Group V elements, x, y, and z are positive numbers which are determined according to stoichiometric ratios to ensure charge balance when m is 0, and 0<m<x), and having ferroelectric-like properties.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

The present invention relates to: layered gallium arsenide (GaAs), which is more particularly layered GaAs, which, unlike the conventional bulk GaAs, has a two-dimensional crystal structure, has the ability to be easily exfoliated into nanosheets, and exhibits excellent electrical properties by having a structure that enables easy charge transport in the in-plane direction; a method of preparing the same; and a GaAs nanosheet exfoliated from the same.

The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.

The present invention provides a quantum dot material structure, a liquid crystal display device, and an electronic device. The quantum dot material structure is applied in the liquid crystal display device. The quantum dot material structure includes a quantum dot core, a quantum dot shell, and a quantum dot ligand layer in order from an inside to an outside. The quantum dot core comprises a cadmium arsenide magic-size, and the quantum dot core is used to absorb green light of a predetermined wavelength. The quantum dot shell is used to protect the quantum dot core. The quantum dot ligand layer is used to promote a structural dispersion of the quantum dot material.

There is provided a method for the removal of arsenic from an arsenical bearing sulfides ore, comprising a thermal treatment of arsenical sulfide in the presence of sulfur dioxide, yielding a calcine and a sublimate, the sublimate containing arsenious oxide. The method allows recovering metallic value from an arsenic-bearing metallic sulfides ore, by recovery of the calcine comprising the metallic value of the ore.