Process for reducing hexavalent chromium in oxidic solids, which comprises the steps: a) mixing of the oxidic solid containing Cr(VI) with a carbon-containing compound which is liquid in the range from 20 to 100° C., b) treatment of the mixture obtained after a) in an indirectly heated reactor at a temperature of from 700° C. to 1100° C., particularly preferably at a temperature of from 800° C. to 1000° C., under a protective atmosphere, c) cooling of the reaction product obtained after b) to at least 300° C., preferably at least 150° C., under a protective atmosphere.

The invention relates to a class of electrochemical energy storage materials and a preparation method and application thereof. A porous metal oxide-based electrochemical energy storage material at least comprises a host metal oxide with a hierarchical pore structure; wherein, the host metal oxide is a single crystal, quasicrystal, or twin crystal structure with ordered atomic lattice arrangement, the crystal is rich in oxygen atom vacancy defects, the structural general formula is M.sub.xO.sub.y−z, wherein M is selected from one or more combinations of niobium element, molybdenum element, titanium element, vanadium element, manganese element, iron element, cobalt element, nickel element, copper element, zinc element, tungsten element, tantalum element, and zirconium element; and 1≤x≤2, 1≤y≤5, and 0.1≤z≤0.9, preferably Nb.sub.2O.sub.5−z.

A process for the synthesis of transition metal chalcogenides (TMC) having formula (I). More particularly, the present work relates to a one pot single phase process for the synthesis of a TMC system having formula (I) by wet chemistry. Formula (I) is represented as A.sub.x-B.sub.y.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

Modified copper chromite spinel pigments exhibit lower coefficients of thermal expansion than unmodified structures. Three methods exist to modify the pigments: (1) the incorporation of secondary modifiers into the pigment core composition, (2) control of the pigment firing profile, including both the temperature and the soak time, and (3) control of the pigment core composition.

Methods of forming spinel ferrite nanoparticles containing a chromium-substituted copper ferrite as well as properties (e.g. particle size, crystallite size, pore size, surface area) of these spinel ferrite nanoparticles are described. Methods of preventing or reducing microbe growth on a surface by applying these spinel ferrite nanoparticles onto the surface in the form of a suspension or an antimicrobial product are also described.

Methods of forming spinel ferrite nanoparticles containing a chromium-substituted copper ferrite as well as properties (e.g. particle size, crystallite size, pore size, surface area) of these spinel ferrite nanoparticles are described. Methods of preventing or reducing microbe growth on a surface by applying these spinel ferrite nanoparticles onto the surface in the form of a suspension or an antimicrobial product are also described.

An object of the present invention is to provide an infrared light-emitting phosphor which emits light in a wavelength range where the sensitivity of a detector is high by combination with a semiconductor light-emitting element that emits light in the visible light region, and to provide an infrared light-emitting device using the infrared light-emitting phosphor. The object can be achieved with a light-emitting device including a semiconductor light-emitting element that emits ultraviolet light or visible light and a phosphor that absorbs ultraviolet light or visible light emitted from the semiconductor light-emitting element and emits light in the infrared region, wherein an emission peak wavelength in the infrared region of the phosphor emitting in the infrared region is from 750 to 1,050 nm, and the half width of an emission peak waveform is more than 50 nm.

Provided are a negative electrode for a secondary battery having improved life characteristics, a negative electrode slurry and a method for manufacturing a negative electrode. The negative electrode for a secondary battery includes at least a graphite-based material and a silicon-based material, as a negative electrode active material, and a conductive material, wherein the graphite-based material includes a granulated product of artificial graphite with natural graphite, at least a part of natural graphite in the granulated product is exfoliated partially to form an exfoliated portion, and the exfoliated portion is in contact with the silicon-based material or another granulated product of artificial graphite with natural graphite, or forms a composite with the silicon-based material.

The invention relates to active electrode materials and to methods for the manufacture of active electrode materials. Such materials are of interest as active electrode materials in lithium-ion or sodium-ion batteries. The invention provides a method of making an active electrode material, the method comprising: providing a mixed niobium oxide; combining the mixed niobium oxide with a carbon precursor to form an intermediate material, wherein the carbon precursor comprises polyaromatic sp.sup.2 carbon and is selected from pitch carbons, graphene oxide, and mixtures thereof; and heating the intermediate material under reducing conditions to pyrolyse the carbon precursor forming a carbon coating on the mixed niobium oxide and introducing oxygen vacancies into the mixed niobium oxide, thereby forming the active electrode material.