C03C2204/00

Crystallized glass substrate

To provide a crystallized glass substrate including a surface with a compressive stress layer, where a stress depth DOL.sub.zero of the compressive stress layer, at which the compressive stress is 0 MPa, is 45 to 200 μm, a compressive stress CS on an outermost surface of the compressive stress layer is 400 to 1400 MPa, and a central stress CT determined by using curve analysis is 55 to 300 MPa.

Glass fiber and method for producing same

Provided is a glass fiber having a low spinning temperature and a low liquidus temperature, and besides, having a large difference between the liquidus temperature and the spinning temperature, and a method of manufacturing the same. The glass fiber of the present invention includes as a glass composition, in terms of mass % on an oxide basis, 50% to 65% of SiO.sub.2, 0% to 3% of Al.sub.2O.sub.3, 0% to 1% of MgO, 0% to less than 0.7% of CaO, 0% to 1% of Li.sub.2O, 10% to 20% of Na.sub.2O, 0% to 2% of K.sub.2O, 6% to 10% of TiO.sub.2, and 15% to 20% of ZrO.sub.2, and has a value for (Na.sub.2O+K.sub.2O)/(MgO+CaO) of 6.0 or more.

Solar cell

Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

PLASMA-RESISTANT GLASS AND MANUFACTURING METHOD THEREOF
20230043972 · 2023-02-09 ·

The present invention relates to plasma-resistant glass containing 32-52 mol % of SiO.sub.2, 5-15 mol % of Al.sub.2O.sub.3, 30-35 mol % of CaO, and 0.1-15 mol % of CaF.sub.2 as chemical components, and a manufacturing method thereof. According to the present invention, a glass stability index K.sub.H is 2.0 or higher, and a plasma-resistant characteristic of an etch rate of lower than 10 nm/min for a mixed plasma of fluorine and argon (Ar) is exhibited.

Decorative porous inorganic layer compatible with ion exchange processes

Embodiments of methods for forming strengthened glass articles comprise providing an exchangeable glass substrate having a coefficient of thermal expansion (CTE) between about 60×10−7°/C. to about 110×10−7°/C., depositing at least one decorative porous inorganic layer onto at least a portion of the surface of the glass substrate, wherein the decorative porous inorganic layer comprises a glass transition temperature (Tg)≥450° C., a glass softening temperature (Ts)≥650° C., wherein the difference in CTE values between the glass substrate and the decorative porous inorganic layer is within 10×10−7°/C.; and curing the glass substrate and the deposited decorative porous inorganic layer at a temperature greater than the Ts of the decorative porous inorganic layer; and chemically strengthening the cured glass substrate and the decorative porous inorganic layer thereon via ion exchange at a temperature below the Tg of the decorative porous inorganic layer.

Glass substrate, semiconductor device, and display device
11554983 · 2023-01-17 · ·

A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα.sub.50/100| of a difference between an average coefficient of thermal expansion α.sub.50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα.sub.100/200| of a difference between an average coefficient of thermal expansion α.sub.100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα.sub.200/300| of a difference between an average coefficient of thermal expansion α.sub.200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

GLASS-BASED ARTICLE WITH ENGINEERED STRESS DISTRIBUTION AND METHOD OF MAKING SAME

Disclosed herein are glass-based articles having a first surface having an edge, wherein a maximum optical retardation of the first surface is at the edge and the maximum optical retardation is less than or equal to about 40 nm and wherein the optical retardation decreases from the edge toward a central region of the first surface, the central region having a boundary defined by a distance from the edge toward a center point of the first surface, wherein the distance is ½ of the shortest distance from the edge to the center point.

Transparent tantalum oxide glass-ceramics and transparent aluminum tantalate glass-ceramics

A transparent glass-ceramic composition including: of the formula Ta.sub.2-xAl.sub.xO.sub.5-x where x is less than 1; of the formula AlTaO.sub.4; of the formula AlPO.sub.4; a mixture of AlTaO.sub.4 and AlPO.sub.4; or a mixture of the formula Ta.sub.2-xAl.sub.xO.sub.5-x, AlTaO.sub.4, and AlPO.sub.4. Also disclosed are transparent glass-ceramic compositions including, for example, a dopant as defined herein, or a supplemental metal oxide or metalloid oxide of M.sub.xO.sub.y, M.sub.xM′.sub.xO.sub.y, or a mixture thereof such as oxides of Nb, Ti, W, B, or Ga, as defined herein. Also disclosed are methods of making the disclosed transparent glass-ceramic compositions, and optical articles, optical components, and optical apparatus thereof.

METHOD FOR MANUFACTURING CERAMIC SUBSTRATE, CERAMIC SUBSTRATE, AND SILVER-BASED CONDUCTOR MATERIAL
20180014408 · 2018-01-11 ·

A method for manufacturing a ceramic substrate containing glass includes a firing step in which an unfired silver-based conductor material is disposed on an unfired ceramic layer and is fired. The unfired silver-based conductor material contains at least one of a metal boride and a metal silicide.

3D PRINTER PRINTHEAD, 3D PRINTER USING SAME, METHOD FOR MANUFACTURING MOLDED PRODUCT BY USING 3D PRINTER, METHOD FOR MANUFACTURING ARTIFICIAL TOOTH BY USING 3D PRINTER, AND METHOD FOR MANUFACTURING MACHINABLE GLASS CERAMIC MOLDED PRODUCT BY USING 3D PRINTER

The present invention relates to a 3D printer printhead, a 3D printer using the same, a method for manufacturing a molded product by using the 3D printer, a method for manufacturing an artificial tooth by using the 3D printer, and a method for manufacturing a machinable glass ceramic molded product by using the 3D printer, the 3D printer printhead comprising: an inlet through which glass wire, which is a raw material, is introduced; a heating means for heating the glass wire introduced through the inlet; a melting furnace for providing a space in which the glass wire is fused; and a nozzle connected to the lower part of the melting furnace so as to temporarily store the fused glass or discharge a targeted amount of the fused glass, wherein the melting furnace includes an exterior frame made from a heat resistant material and an interior frame having a crucible shape, and the interior frame is made from platinum (Pt), a Pt alloy or graphite, which have a low contact angle, or a material having a surface coated with Pt or a diamond-like carbon (DLC) so as to prevent the fused glass from sticking thereto. According to the present invention, the molded product, the artificial tooth, and the machinable glass ceramic molded product can be manufactured with excellent mechanical properties, thermal durability, chemical durability and oxidation resistance and outstanding texture by using the glass wire as a raw material.