Patent classifications
C04B37/00
MULTILAYER BODY AND ELECTRONIC COMPONENT FORMED OF SAME
A laminate body including a base material and a flat silicone sealing layer adhered thereto, generally without any voids, is provided. Also provided is a curable hot melt silicone composition layer with a particular curable hot melt silicone composition, providing a laminate body that does not readily cause stress on a substrate after the curable hot melt silicone composition is cured. A laminate body comprises a base material, and a curable hot melt silicone composition layer in contact with the base material. The curable hot melt silicone composition includes an organopolysiloxane resin containing siloxane units selected from a group containing T units or Q units making up at least 20 mol % or more of all siloxane units. The curable hot melt silicone composition generally has a melt viscosity as measured using a flow tester at a pressure of 2.5 MPa and at 100° C. of 5,000 Pa.Math.s or less.
CERAMIC JOINED BODY, ELECTROSTATIC CHUCK DEVICE, AND METHOD FOR PRODUCING CERAMIC JOINED BODY
A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3); and a pair of intermediate layers (6, 7) that are interposed between the pair of ceramic plates (2, 3) and the conductive layer (4) and are in contact with the pair of ceramic plates (2, 3) and the conductive layer (4).
Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
Dense composite material, method for producing the same, joined body, and member for semiconductor manufacturing device
According to the present invention, a dense composite material includes titanium silicide in an amount of 43 to 63 mass %; silicon carbide in an amount less than the mass percentage of the titanium silicide; and titanium carbide in an amount less than the mass percentage of the titanium silicide. In the dense composite material, a maximum value of interparticle distances of the silicon carbide is 40 μm or less, a standard deviation of the interparticle distances is 10 or less, and an open porosity of the dense composite material is 1% or less.
Modified scheelite material for co-firing
Disclosed herein are embodiments of low temperature co-fireable scheelite materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. In some embodiments, the scheelite material can include aluminum oxide for temperature expansion regulation.
MULTI-LAYER FIBER REINFORCEMENT FOR A CERAMIC MATRIX COMPOSITE AND METHODS OF MANUFACTURING
A method of manufacturing a ceramic matrix composite component includes placing a first impregnated fiber layer on a surface, aligning a second impregnated fiber layer with the first impregnated fiber layer, and joining the first impregnated fiber layer with the second impregnated fiber layer at a plurality of discrete joining regions. The joining of the first and second impregnated fiber layers comprises transferring energy from at least one tool into the first and second impregnated fiber layers at the plurality of discrete joining regions.
Semiconductor substrate support with multiple electrodes and method for making same
A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.
Method for producing semiconductor production device component, and semiconductor production device component
A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.
Method for producing semiconductor production device component, and semiconductor production device component
A first ceramic member and a second ceramic member are joined together at a lower joining temperature while reducing the loss of bond strength. A method for producing a semiconductor production device component includes a step of providing a first ceramic member including an AlN-based material, a step of providing a second ceramic member including an AlN-based material, and a step of joining the first ceramic member and the second ceramic member to each other by thermally pressing the first ceramic member and the second ceramic member to each other via a joint agent including Eu.sub.2O.sub.3, Gd.sub.2O.sub.3 and Al.sub.2O.sub.3 disposed between the first ceramic member and the second ceramic member.
Thermal insulation
A process for the manufacture of inorganic fibres comprises: (a) selecting a composition and proportion of: (i) silica sand; (ii) lime comprising at least 0.10 wt % magnesia; and (iii) optional additives comprising a source of oxides or non-oxides of one or more of the lanthanides series of elements, or combinations thereof; (b) mixing the silica sand; lime; and optional additives to form a mixture; (c) melting the mixture in a furnace; and (d) shaping the molten mixture into inorganic fibres. The raw materials selection comprises composition selection and proportion selection of the raw materials to obtain an inorganic fibre composition comprising a range of from 61.0 wt % and 70.8 wt % silica; less than 2.0 wt % magnesia; less than 2.0% incidental impurities; and no more than 2.0 wt % of metal oxides and/or metal non-oxides derived from said optional additives; with calcia providing the balance up to 100 wt %; and wherein the inorganic fibre composition comprises no more than 0.80 wt % Al.sub.2O.sub.3 derived from the incidental impurities and/or the optional additives.