A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

Methods of producing N,N-branched sulfamoyl fluoride compounds of the formula F-S(O).sub.2-NR.sub.2 by contacting bismuth trifluoride with an N,N-branched sulfamoyl nonfluorohalide compound of the formula X-SO.sub.2NR.sub.2, wherein X=chlorine (Cl), bromine (Br), or iodine (I), and each R is, independently, a linear or branched alkyl, fluoroalkyl, alkenyl, fluoroalkenyl, alkynyl, or fluoroalkynyl with 1 to 12 carbon atoms, to fluorinate the N,N-branched sulfamoyl nonfluorohalide compound. This is a non-aqueous method, the purity of product is very high, and the desired product can be isolated in quantitative yield. The N,N-branched sulfamoyl fluoride compounds so produced are useful in various applications including as electrolyte solvents and additives in electrochemical devices, such as lithium batteries and capacitors, and in biological fields, among others.

Methods of producing N,N-branched sulfamoyl fluoride compounds of the formula F-S(O).sub.2-NR.sub.2 by contacting bismuth trifluoride with an N,N-branched sulfamoyl nonfluorohalide compound of the formula X-SO.sub.2NR.sub.2, wherein X=chlorine (Cl), bromine (Br), or iodine (I), and each R is, independently, a linear or branched alkyl, fluoroalkyl, alkenyl, fluoroalkenyl, alkynyl, or fluoroalkynyl with 1 to 12 carbon atoms, to fluorinate the N,N-branched sulfamoyl nonfluorohalide compound. This is a non-aqueous method, the purity of product is very high, and the desired product can be isolated in quantitative yield. The N,N-branched sulfamoyl fluoride compounds so produced are useful in various applications including as electrolyte solvents and additives in electrochemical devices, such as lithium batteries and capacitors, and in biological fields, among others.

Disclosed in the present invention were a fluorosulfonyl-containing compound, an intermediate thereof, a preparation method therefor and use thereof. The fluorosulfonyl-containing compound disclosed in the present invention comprises a cation and an anion, the cation being as shown in Formula (1). The fluorosulfonyl-containing compound of the present invention can react with a substrate to efficiently synthesize a fluorosulfonylation product, has low toxicity, was simple to prepare, was convenient to use, and was in a solid stable state at normal temperature. Furthermore, the compound has a wide range of adaptable substrates, including phenolic compounds and amine compounds, and was the only solid form agent that can achieve such a chemical conversion, and therefore has important academic and application value.

##STR00001##

Disclosed herein are compounds of formula ArN(SO.sub.2F).sub.2, wherein Ar is selected from an optionally substituted aryl, an optionally substituted five-membered heteroaryl, or an optionally substituted six-membered heteroaryl. Also disclosed are methods of synthesizing the above compounds by reacting a compound of formula ArNHR.sub.9 with MN(SO.sub.2F).sub.2. ##STR00001##

Disclosed herein are compounds of formula ArN(SO.sub.2F).sub.2, wherein Ar is selected from an optionally substituted aryl, an optionally substituted five-membered heteroaryl, or an optionally substituted six-membered heteroaryl. Also disclosed are methods of synthesizing the above compounds by reacting a compound of formula ArNHR.sub.9 with MN(SO.sub.2F).sub.2. ##STR00001##

A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

Disclosed herein are compounds of formula ArN(SO.sub.2F).sub.2, wherein Ar is selected from an optionally substituted aryl, an optionally substituted five-membered heteroaryl, or an optionally substituted six-membered heteroaryl. Also disclosed are methods of synthesizing the above compounds by reacting a compound of formula ArNHR.sub.9 with MN(SO.sub.2F).sub.2.