C08F38/00

Temporary protective lacquer optical element

A lacquer composition is provided, comprising 20%-79.9% by weight, based on the total weight of the composition, of a thiol compound having two or more thiol groups, 20%-79.9% by weight, based on the total weight of the composition, of a compound having two or more carbon-carbon double bonds and 0.1%-10% by weight, based on the total weight of the composition, of a separating agent having an alkyl radical having 4-20 carbon atoms, where the alkyl radical is unsubstituted or fluorine-substituted and the alkyl radical is bonded to a functional group. Also provided are the use of this lacquer composition as a protective lacquer on an optical surface of an optical element in the production of the optical element, and an optical element comprising the protective lacquer.

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent, ##STR00001##
noting that in the general formula (1A), when W.sub.1 represents any of ##STR00002##
R.sub.1 does not represent any of ##STR00003##

Carbon Fiber Precursors and Production Process

A new class of cost-effective carbon fiber precursors that comprise both hydrocarbon polymer and Pitch structural features in the same polymer structure to exhibit complementary advantages of both PAN- and Pitch-based carbon fiber precursors. The new class of carbon fiber precursors comprise a polymeric pitch copolymer, wherein the polymeric pitch copolymer includes a polymer chain and several pitch polycyclic aromatic hydrocarbon (PAH) molecules grafted or chemically bonded to the polymer chain. Method and processes for the creation of the new class of carbon fiber precursors are also presented, wherein said methods may comprise a thermally-induced coupling and extrusion step.

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, ##STR00001## noting that in the general formula (1B), when W.sub.1 represents ##STR00002##  R.sub.1 does not represent any of ##STR00003##

COMPOSITIONS AND METHODS FOR SINGLE-STEP MULTIPURPOSE SURFACE FUNCTIONALIZATION
20230174690 · 2023-06-08 ·

Compositions and methods for functionalizing a variety of surfaces are provided herein. The compositions include compounds of formula (I), which react with azido compounds (R-N.sub.3) to form cycloadducts that can spontaneously polymerize on a surface. The R-group in the azido compound can be any molecule of interest, including small molecules and macromolecules

COVALENTLY CROSS LINKED HYDROGELS AND METHODS OF MAKING AND USING SAME
20170232143 · 2017-08-17 ·

A thiol-yne polymeric material and methods for producing said polymers are disclosed. The material is produced by the radically mediated polymerization of monomers having alkyne and thiol functional groups. The alkyne moiety, internal or terminal, may react with one or two thiols. Degradable monomers may be used to form degradable polymers.

RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM

A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH.sub.2).sub.p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R.sup.01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

##STR00001##

RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM

A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH.sub.2).sub.p—; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R.sup.01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

##STR00001##

METALLACYCLOPENTADIENE INITIATORS FOR CYCLIC POLYMER SYNTHESIS FROM ALKYNES
20220135709 · 2022-05-05 ·

Provided herein are complexes for polymerization of linear alkynes to cyclic poly(alkynes), and methods of making and using same. For example, provided herein are compounds of formula (I) or formula (IV):

##STR00001##

METALLACYCLOPENTADIENE INITIATORS FOR CYCLIC POLYMER SYNTHESIS FROM ALKYNES
20220135709 · 2022-05-05 ·

Provided herein are complexes for polymerization of linear alkynes to cyclic poly(alkynes), and methods of making and using same. For example, provided herein are compounds of formula (I) or formula (IV):

##STR00001##