Patent classifications
C09D165/00
FILM FORMING METHOD, POLYPHENYLENE SULFIDE POWDER COATING MATERIAL, COATING FILM, AND COATED ARTICLE
Provided is a film forming method that can form a film having a thickness of 500 μm or more with a single coating of a substrate.
The present disclosure is a film forming method using a powder coating material containing a polyphenylene sulfide resin, the method including heating the powder coating material at a temperature equal to or higher than a melting point of the polyphenylene sulfide resin and within a range of 250 to 400° C., in which a single coating of a substrate forms a film having a thickness of 500 μm or more; and the obtained film has a surface roughness, Ra, of 0.30 μm or less.
FILM FORMING METHOD, POLYPHENYLENE SULFIDE POWDER COATING MATERIAL, COATING FILM, AND COATED ARTICLE
Provided is a film forming method that can form a film having a thickness of 500 μm or more with a single coating of a substrate.
The present disclosure is a film forming method using a powder coating material containing a polyphenylene sulfide resin, the method including heating the powder coating material at a temperature equal to or higher than a melting point of the polyphenylene sulfide resin and within a range of 250 to 400° C., in which a single coating of a substrate forms a film having a thickness of 500 μm or more; and the obtained film has a surface roughness, Ra, of 0.30 μm or less.
COATING METHOD OF IMPLANT USING PARYLENE
The present disclosure relates to a coating method of implant using parylene, for coating a surface of a dental implant, including a pretreating step of pretreating the implant; and a coating step of coating a surface of the pretreated implant with a coating material to form a polymer coating layer, wherein the coating material is provided as parylene.
According to the present disclosure, a parylene thin film may be uniformly coated on the surface of the dental implant, and according to such a thin film, the growth of anaerobic bacteria can be effectively inhibited in spaces where the fixture and the upper structure of the dental implant are joined to each other, and where the upper structure and the crown are joined to each other.
NOVEL POLYFLUORENE-BASED IONOMER, ANION EXCHANGE MEMBRANE, METHOD FOR PREPARING THE POLYFLUORENE-BASED IONOMER AND METHOD FOR FABRICATING THE ANION EXCHANGE MEMBRANE
A novel polyfluorene-based ionomer, an anion exchange membrane, a method for preparing the polyfluorene-based ionomer, and a method for fabricating the anion exchange membrane are proposed. The polyfluorene-based ionomer contains no aryl ether bonds in the polymer backbone and includes piperidinium groups incorporated into the repeating units. The anion exchange membrane is fabricated from the polyfluorene-based ionomer. The anion exchange membrane has good thermal and chemical stability, excellent mechanical properties, and high ion conductivity. Due to these advantages, the anion exchange membrane can be applied as a membrane for an alkaline fuel cell and to a binder for an alkaline fuel cell or water electrolysis.
ORGANIC SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF, COMPOUND, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND MANUFACTURING METHOD THEREOF
Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.
The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater.
D-A (1)
ORGANIC SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF, COMPOUND, ORGANIC SEMICONDUCTOR COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND MANUFACTURING METHOD THEREOF
Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film.
The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater.
D-A (1)
ALKENE ISOMERIZATION AS AN ENTRY TO EFFICIENT ALTERNATING RING-OPEINING METATHESIS POLYMERIZATION (i-AROMP)
This invention relates to the field of polymers and olefin polymerization, and more specifically olefin metathesis polymerization. Specifically, the present invention provides a polymer comprising rigorously alternating AB subunits and methods of formation of the AB alternating polymers. In the polymers and process of the invention, the A monomer is derived from a cyclobutene derivative, and the B monomer is derived from a cyclohexene derivative. The polymerization takes place in the presence of an olefin metathesis catalyst.
ALKENE ISOMERIZATION AS AN ENTRY TO EFFICIENT ALTERNATING RING-OPEINING METATHESIS POLYMERIZATION (i-AROMP)
This invention relates to the field of polymers and olefin polymerization, and more specifically olefin metathesis polymerization. Specifically, the present invention provides a polymer comprising rigorously alternating AB subunits and methods of formation of the AB alternating polymers. In the polymers and process of the invention, the A monomer is derived from a cyclobutene derivative, and the B monomer is derived from a cyclohexene derivative. The polymerization takes place in the presence of an olefin metathesis catalyst.
ELECTROLYTIC CAPACITOR AND CONDUCTIVE POLYMER DISPERSION
An electrolytic capacitor includes an anode body, a dielectric layer formed on the anode body, and a conductive polymer layer covering at least a part of the dielectric layer. The conductive polymer layer includes a conductive polymer and a polymer dopant. The polymer dopant includes a copolymer that includes a first monomer unit and a second monomer unit. The first monomer unit has a sulfonate group. Time second monomer unit has a functional group represented by a formula (i); —CO—R.sup.1—COOH (where R.sup.1 represents an aliphatic hydrocarbon group having 1 to 8 carbon atoms, an aromatic group, or a divalent group —OR.sup.2—, R.sup.2 representing an aliphatic hydrocarbon group having 1 to 8 carbon atoms or an aromatic group).
ELECTROLYTIC CAPACITOR AND CONDUCTIVE POLYMER DISPERSION
An electrolytic capacitor includes an anode body, a dielectric layer formed on the anode body, and a conductive polymer layer covering at least a part of the dielectric layer. The conductive polymer layer includes a conductive polymer and a polymer dopant. The polymer dopant includes a copolymer that includes a first monomer unit and a second monomer unit. The first monomer unit has a sulfonate group. Time second monomer unit has a functional group represented by a formula (i); —CO—R.sup.1—COOH (where R.sup.1 represents an aliphatic hydrocarbon group having 1 to 8 carbon atoms, an aromatic group, or a divalent group —OR.sup.2—, R.sup.2 representing an aliphatic hydrocarbon group having 1 to 8 carbon atoms or an aromatic group).