A method of producing an inorganic solid pattern is described that includes: a step of coating an inorganic solid with a composition containing a polymetalloxane and an organic solvent; a step of heating the coating film obtained in the coating step, at a temperature of 100° C. or more and 1000° C. or less to form a heat-treated film; a step of forming a pattern of the heat-treated film; and a step of patterning the inorganic solid by etching using the pattern of the heat-treated film as a mask.

A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysus compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.

R.sup.1X.sup.1).sub.n  (1)

A dust resistant and moisture resistant coating composition includes within a solvent that is generally an aqueous solvent: (1) a first component that is chemically condensable with itself and independently cross-linkable; (2) a second component that is chemically condensable with itself and with the first component and includes at least one of a fluorocarbon functionality and a hydrocarbon functionality; and (3) an optional third component that is chemically condensable with the first component and the second component but is neither independently cross-linkable nor includes the at least one of the fluorocarbon functionality and the hydrocarbon functionality. A coated article that results from application of the coating composition to a substrate shows enhanced dust resistance and moisture resistance.

The present invention provides certain CHIP films and coatings, as well as the preparation and uses thereof. Chalcogenide hybrid organic/inorganic polymers or CHIPs may be suitable for use in antireflection coatings for use with infrared optics, for example as applied to lenses for infrared cameras. The coatings may be applied with spin coating and have a thickness related to the quarter wavelength of the desired infrared wavelengths.

The present invention provides certain CHIP films and coatings, as well as the preparation and uses thereof. Chalcogenide hybrid organic/inorganic polymers or CHIPs may be suitable for use in antireflection coatings for use with infrared optics, for example as applied to lenses for infrared cameras. The coatings may be applied with spin coating and have a thickness related to the quarter wavelength of the desired infrared wavelengths.

A linear titanium-oxide polymer, a nano-TiO.sub.2 coating structure, a glass fiber mat-nano-TiO.sub.2 photocatalytic coating structure and methods for preparing the same are disclosed. The linear titanium-oxide polymer has the following structural formula:

##STR00001##

The prepared materials can be used for photocatalysis, deodorizing filters, antibacterial filters, indoor air purifying filters, transport vehicle purifying filters, and household appliance purifiers and so on.

The present invention relates to a composition comprising; components a. c. and d; and optional component b. wherein, component a. is a metal compound having the structure (I), optional component b., is a polyol additive, having structure (VI), component c. is a high performance polymer additive, and component d. is a solvent. The present invention further relates to using this compositions in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

The present invention relates to a composition comprising; components a. c. and d; and optional component b. wherein, component a. is a metal compound having the structure (I), optional component b., is a polyol additive, having structure (VI), component c. is a high performance polymer additive, and component d. is a solvent. The present invention further relates to using this compositions in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

A composition is provided for resist underlayer film formation comprising a compound represented by the following formula (1) and a silicon containing compound:

[L.sub.xTe(OR.sup.1).sub.y]  (1)

(In formula (1), L is a ligand other than OR.sup.1; R.sup.1 is any of a hydrogen atom, a substituted or unsubstituted linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; the sum of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of R.sup.1 may be the same or different.)

A composition is provided for resist underlayer film formation comprising a compound represented by the following formula (1) and a silicon containing compound:

[L.sub.xTe(OR.sup.1).sub.y]  (1)

(In formula (1), L is a ligand other than OR.sup.1; R.sup.1 is any of a hydrogen atom, a substituted or unsubstituted linear alkyl group having 1 to 20 carbon atoms or branched or cyclic alkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, and a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms; x is an integer of 0 to 6; y is an integer of 0 to 6; the sum of x and y is 1 to 6; when x is 2 or more, a plurality of L may be the same or different; and when y is 2 or more, a plurality of R.sup.1 may be the same or different.)