A method of selectively etching a metal component of a workpiece further comprising a ferromagnetic insulator component. The method comprises contacting the metal component with an etchant solution. The etchant solution comprises a basic etchant and a solvent. The method is useful in the context of the fabrication of semiconductor-superconductor-ferromagnetic insulator hybrid devices, for example. The etchant solution may not attack the ferromagnetic insulator component. Also provided is a composition for etching a metal, and a kit comprising the composition and a composition for depositing a styrene-acrylate co-polymer on a surface.

A method of selectively etching a metal component of a workpiece further comprising a ferromagnetic insulator component. The method comprises contacting the metal component with an etchant solution. The etchant solution comprises a basic etchant and a solvent. The method is useful in the context of the fabrication of semiconductor-superconductor-ferromagnetic insulator hybrid devices, for example. The etchant solution may not attack the ferromagnetic insulator component. Also provided is a composition for etching a metal, and a kit comprising the composition and a composition for depositing a styrene-acrylate co-polymer on a surface.

The present invention provides a treatment liquid exhibiting excellent selectivity in dissolving SiGe in a case where the SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid.

The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, an acetate solvent, and an additive, in which the additive is an additive that does not contain a Si atom.

The present invention aims to provide a dry etching agent having less load on global environment and capable of anisotropic etching without the use of special equipment and obtaining a good processing shape and to provide a dry etching method using the dry etching agent. The dry etching agent according the present invention contains at least a hydrofluoroalkylene oxide represented by the following chemical formula: CF.sub.3—C.sub.xH.sub.yF.sub.zO (where x=2 or 3; y=1, 2, 3, 4 or 5; and z=2x−1−y) and having an oxygen-containing three-membered ring. The dry etching method according to the present invention includes selectively etching of at least one kind of silicon-based material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide with the use of a plasma gas generated by plasmatization of the dry etching agent.

The present invention aims to provide a dry etching agent having less load on global environment and capable of anisotropic etching without the use of special equipment and obtaining a good processing shape and to provide a dry etching method using the dry etching agent. The dry etching agent according the present invention contains at least a hydrofluoroalkylene oxide represented by the following chemical formula: CF.sub.3—C.sub.xH.sub.yF.sub.zO (where x=2 or 3; y=1, 2, 3, 4 or 5; and z=2x−1−y) and having an oxygen-containing three-membered ring. The dry etching method according to the present invention includes selectively etching of at least one kind of silicon-based material selected from the group consisting of silicon dioxide, silicon nitride, polycrystalline silicon, amorphous silicon and silicon carbide with the use of a plasma gas generated by plasmatization of the dry etching agent.

The present invention relates to a stripper composition for removing a photoresist in a process of manufacturing a semiconductor device.

According to the present invention, it is possible to prevent corrosion of the underlying film while improving the peeling force for the photoresist, and to improve the stability of the composition over time.

The present invention relates to a stripper composition for removing a photoresist in a process of manufacturing a semiconductor device.

According to the present invention, it is possible to prevent corrosion of the underlying film while improving the peeling force for the photoresist, and to improve the stability of the composition over time.

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

An electrostatic device includes a top and a bottom silicon layer, around an insulating buried layer. A beam opening allows a beam of charged particles to travel through. The device is encapsulated in an insulating layer. One or more electrodes and ground planes are deposited on the insulating layer. These also cover the inside of the beam opening. Electrodes and ground planes are physically and electrically separated by micro-trenches and micro-undercuts that provide shadow areas when the conductive areas are deposited. Electrodes may be shaped as elongated islands and may include portions overhanging the top silicon layer, supported by electrode-anchors. Manufacturing starts from a single wafer including the top, buried, and bottom layers, or it starts from two separate silicon wafers. Manufacturing includes steps to form the top and bottom beam openings and microstructures, to encapsulate the device in an insulating layer, and to deposit electrodes and ground areas.