A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

A chamber is provided. The chamber includes a Faraday shield positioned above a substrate support of the chamber. A dielectric window is disposed over the Faraday shield, and the dielectric window has a center opening. A hub having an internal plenum for passing a flow of fluid received from an input conduit and removing the flow of fluid from an output conduit is further provided. The hub has sidewalls and a center cavity inside of the sidewalls for an optical probe, and the internal plenum is disposed in the sidewalls. The hub has an interface surface that is in physical contact with a back side of the Faraday shield. The physical contact provides for a thermal couple to the Faraday shield at a center region around said center opening, and an outer surface of the sidewalls of the hub are disposed within the center opening of the dielectric window.

A plasma processing apparatus includes: a processing container having a cylindrical shape; a pair of plasma electrodes arranged along the longitudinal direction of the processing container while facing each other; and a radio-frequency power supply configured to supply a radio-frequency power to the pair of plasma electrodes. In the pair of plasma electrodes, an inter-electrode distance at a position distant from a power feed position to which the radio-frequency power is supplied is longer than an inter-electrode distance at the power feed position.

The present invention relates to a method for producing a substrate (2) which is coated with an alkali metal (1), in which method a promoter layer (3) which is composed of a material which reacts with the alkali metal (1) by at least partial chemical reduction of the promoter layer (3) is applied to a surface of the substrate (2) and a surface of the promoter layer (3) is acted on by an alkali metal (1) and then the alkali metal (1) is converted into the solid phase and a coating containing the alkali metal is formed.

A method for operating a coating system for producing layer systems includes the steps of: (i) coating a layer system in a coating facility; (ii) determining a spectral actual measuring plot for the layer system in an optical measuring system; (iii) determining an actual data set by fitting a simulation target measuring plot to the actual measuring plot; (iv) determining actual layer parameters as computed actual layer parameters from the simulation target measuring plot by simulation of the layer system using the actual data set; (v) outputting the actual data set and the computed actual layer parameters at least to a decision system; (vi) providing quality requirement data; and (vii) deciding on an approval of the layer system in the decision system on the basis of a comparison of at least the actual data set, the computed actual layer parameters and. the quality requirement data. A coating system for producing layer systems is also disclosed.

The invention relates to a method of forming a coating for deposition to non-metallic surfaces, comprising the steps of applying (120) a semiconductor material to a substrate to form a semiconductor material layer and simultaneously or subsequently applying (140) metallic material or additional semiconductor material, wherein the metallic material or additional semiconductor material is introduced into the semiconductor material layer in a targeted manner to tailor the optical properties of the coating.

A base material according to an aspect of the present disclosure is made of a cemented carbide. The cemented carbide includes a first hard phase and a binder phase. The first hard phase consists of WC particles. The binder phase includes at least one element selected from Co and Ni. The base material includes a body portion, and a surface portion provided on a surface of the body portion. The surface portion has a thickness less than or equal to an average particle size in the first hard phase. A ratio (B/A) of an area proportion (B) of the binder phase in a surface of the surface portion to an area proportion (A) of the binder phase in a cross section of the body portion is not less than 1.2 and not more than 2.0.

A base material according to an aspect of the present disclosure is made of a cemented carbide. The cemented carbide includes a first hard phase and a binder phase. The first hard phase consists of WC particles. The binder phase includes at least one element selected from Co and Ni. The base material includes a body portion, and a surface portion provided on a surface of the body portion. The surface portion has a thickness less than or equal to an average particle size in the first hard phase. A ratio (B/A) of an area proportion (B) of the binder phase in a surface of the surface portion to an area proportion (A) of the binder phase in a cross section of the body portion is not less than 1.2 and not more than 2.0.

One example of the disclosure provides a method of fabricating a chamber component with a coating comprising a yttrium containing material with desired film properties. In one example, the method of fabricating a coating material includes providing a base structure comprising an aluminum containing material. The method further includes forming a coating layer that includes a yttrium containing material on the base structure. The method also includes thermal treating the coating layer to form a treated coating layer.

An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.