Manufacturing equipment with which steps from processing to sealing of an organic compound film can be continuously performed is provided. The manufacturing equipment enables continuous processing of a patterning step of a light-emitting device and a light-receiving device and a step of sealing top and side surfaces of organic layers to prevent the top and side surfaces from being exposed to the air, which allows formation of the light-emitting device and the light-receiving device each of which has a minute structure, high luminous, and high reliability. This manufacturing equipment can be built in an in-line manufacturing system where apparatuses are arranged according to the order of process steps for the light-emitting device and the light-receiving device, resulting in high throughput manufacturing.

A cutting tool includes a substrate of cemented carbide having hard constituents in a metallic binder. The hard constituents include WC. The WC content in the cemented carbide is 80-95 wt %. The cemented carbide has a Fe+Ni+Co+Cr content of 3-13 wt %, an atomic ratio of 0.05<Fe/(Fe+Ni+Co+Cr)<0.35, an atomic ratio of 0.05<Ni/(Fe+Ni+Co+Cr)<0.35, an atomic ratio of 0.05<Co/(Fe+Ni+Co+Cr)<0.35 and an atomic ratio of 0.05<Cr/(Fe+Ni+Co+Cr)<0.35. The crack resistance W measured on the rake face of the cutting tool is at least 25% higher than the W measured on a cross section of the bulk area of the cutting tool.

A cutting tool includes a substrate of cemented carbide having hard constituents in a metallic binder. The hard constituents include WC. The WC content in the cemented carbide is 80-95 wt %. The cemented carbide has a Fe+Ni+Co+Cr content of 3-13 wt %, an atomic ratio of 0.05<Fe/(Fe+Ni+Co+Cr)<0.35, an atomic ratio of 0.05<Ni/(Fe+Ni+Co+Cr)<0.35, an atomic ratio of 0.05<Co/(Fe+Ni+Co+Cr)<0.35 and an atomic ratio of 0.05<Cr/(Fe+Ni+Co+Cr)<0.35. The crack resistance W measured on the rake face of the cutting tool is at least 25% higher than the W measured on a cross section of the bulk area of the cutting tool.

A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.

The invention relates to a sintered metal material comprising at least one magnetic part, characterised by directional through-pores having a size of between 1 and 100 μm, said material having a density varying by less than 20% from one sample of 1 cm3 to another taken from a one-piece part made from the material.

The invention relates to a sintered metal material comprising at least one magnetic part, characterised by directional through-pores having a size of between 1 and 100 μm, said material having a density varying by less than 20% from one sample of 1 cm3 to another taken from a one-piece part made from the material.

Aspects of the application provide methods of producing substrates having modified surfaces. In some aspects, methods of surface modification involve treating a surface of a substrate with an organic reagent in vapor phase to form an organic layer over the surface. In some aspects, methods of forming a stable surface coating on an oxidized surface are provided.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.

The invention relates to the use of a carbonaceous coating for protection of a passive electrical component from attack by ammonia, wherein the carbonaceous coating is a sol-gel coating or a plasma-polymeric coating. This coating comprises a particular carbon content.

The invention relates to the use of a carbonaceous coating for protection of a passive electrical component from attack by ammonia, wherein the carbonaceous coating is a sol-gel coating or a plasma-polymeric coating. This coating comprises a particular carbon content.