A method for chemical processing an internal cavity of an additive manufactured (AM) metal workpiece is disclosed in which a connector is provided in fluid connection with the internal cavity and a chemical polishing solution is flowed through the connector and the internal cavity to process the internal cavity to a desired finish.

A method for chemical processing an internal cavity of an additive manufactured (AM) metal workpiece is disclosed in which a connector is provided in fluid connection with the internal cavity and a chemical polishing solution is flowed through the connector and the internal cavity to process the internal cavity to a desired finish.

A method of manufacturing a gallium oxide substrate includes polishing the gallium oxide substrate with a polishing slurry, wherein the polishing slurry contains manganese dioxide particles and water.

A method of manufacturing a gallium oxide substrate includes polishing the gallium oxide substrate with a polishing slurry, wherein the polishing slurry contains manganese dioxide particles and water.

A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1, ##STR00001##

A CMP slurry composition for copper films and a method of polishing a copper film using the same are disclosed, the composition including a polar solvent or a non-polar solvent; and polishing particles modified with a silicon-containing compound, wherein the silicon-containing compound is represented by Formula 1, ##STR00001##

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

Provided is a polishing composition in which a polishing speed of silicon germanium is sufficiently high and a selection ratio of the polishing speed of silicon germanium is sufficiently high. A polishing composition includes: abrasive grains; an inorganic salt; and an oxidizing agent, in which the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm.sup.2 and 2.0/nm.sup.2 or less, and a pH of the polishing composition is 6.0 or more.

Embodiments provide a polishing composition for a magnetic disk substrate, the polishing composition containing colloidal silica, at least one of a phosphorus-containing inorganic acid and a phosphorous-containing organic acid, and water. According to at least one embodiment, the colloidal silica in the polishing composition has an average particle diameter (D50) in the range of 5 to 50 nm observed by a transmission electron microscope. In measuring a volume-based particle size distribution of the colloidal silica by dynamic light scattering, when the particle size distribution is measured by adjusting a concentration of colloidal silica particles to be 0.25 mass %, the colloidal silica contains 10 vol % or less of colloidal silica particles larger than 50 nm. The polishing composition has 1 to 50 mass % of the colloidal silica, and the pH (25° C.) in the range of 0.1 to 4.0. The colloidal silica is stabilized by sodium or ammonium.