A method of manufacturing an additively manufactured object includes: checking, for an additively manufactured object including a plurality of internal passages, the presence or absence of a deposit in each inner wall surface of the plurality of internal passages; and selectively removing the deposit from the internal passage in which the deposit has been detected in the checking, among the plurality of internal passages.

A chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a loading ring to apply pressure to an annular region on a back side of the substrate on the pedestal, a polishing ring to bring a polishing material into contact with an annular region on a front side of the substrate that is aligned with the annular region on the back side of the substrate, and a polishing ring actuator to rotate the polishing ring to cause relative motion between the polishing ring and the substrate.

A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber.

A lubricated mechanical polishing (LMP) process is provided that uses hard nanoparticles of less than 5 nm diameter dispersed in a fluid lubricant as a polishing slurry to produce an ultra-smooth surface on a hard metallic or non-metallic substrate with a sub-nanometer surface roughness substantially less than that produced by silica chemical mechanical polishing.

The present disclosure discloses a chemical mechanical polishing apparatus including a polishing machine platform, an electrode film, a polishing pad and a wafer carrier. The electrode film has a first single electrode structure and is disposed on the polishing machine platform. The polishing pad is disposed on the electrode film. The wafer carrier is disposed on the polishing machine platform. In particular, the first single electrode structure generates a first homopolar electric field on the polishing pad.

The present disclosure discloses a chemical mechanical polishing apparatus including a polishing machine platform, an electrode film, a polishing pad and a wafer carrier. The electrode film has a first single electrode structure and is disposed on the polishing machine platform. The polishing pad is disposed on the electrode film. The wafer carrier is disposed on the polishing machine platform. In particular, the first single electrode structure generates a first homopolar electric field on the polishing pad.

Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may be used to define features or components during the numerous material formation and removal steps used to create memory cells within a memory array. The hard mask may be an electrically conductive material, some or all of which may be retained during formation. A conductive line may be connected to each memory cell, and because the hard mask used in forming the cell may be conductive, the cell may be operable even if portions of the hard mask remain after formation.

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.

Representative implementations of techniques, methods, and formulary provide repairs to processed semiconductor substrates, and associated devices, due to erosion or “dishing” of a surface of the substrates. The substrate surface is etched until a preselected portion of one or more embedded interconnect devices protrudes above the surface of the substrate. The interconnect devices are wet etched with a selective etchant, according to a formulary, for a preselected period of time or until the interconnect devices have a preselected height relative to the surface of the substrate. The formulary includes one or more oxidizing agents, one or more organic acids, and glycerol, where the one or more oxidizing agents and the one or more organic acids are each less than 2% of formulary and the glycerol is less than 10% of the formulary.