Provided is a reduction treatment method in which hydrogen radicals are efficiently generated in an amount required for reduction treatment and the surface of an object to be treated is reduced by a relatively simple treatment process. A reduction treatment method including: irradiating a hydrogen radical source-containing material with ultraviolet light having a wavelength of 255 nm or less to generate hydrogen radicals; and bringing the generated hydrogen radicals into contact with a surface of an object to be treated to reduce the surface.

Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Embodiments of the invention relate generally to overmolded protective leaching masks, and methods of manufacturing and using the same for leaching superabrasive elements such as polycrystalline diamond elements. In an embodiment, a protective leaching mask assembly includes a superabrasive element including a central axis and a superabrasive table, and a protective mask overmolded onto at least a portion of the superabrasive element. The protective mask includes a base portion and at least one sidewall extending from the base portion and defining an opening generally opposite the base portion. The at least one sidewall includes an inner surface configured to abut with a selected portion of the superabrasive element being chemically resistant to a leaching agent and an outer surface sloping at an oblique angle relative to the central axis.

A cleaning method for a by-product including a refractory material or a metal compound includes a reforming process and an etching process. In the reforming process, a surface of the by-product is reformed using nitrogen-containing gas and hydrogen-containing gas. In the etching process, the reformed surface is etched using halogen-containing gas and inert gas.

A member for a plasma processing device of the present disclosure is a member for a plasma processing device made of ceramics and having a shape of a cylindrical body with a through hole in an axial direction. The ceramics is mainly composed of aluminum oxide, and has a plurality of crystal grains and a grain boundary phase that is present between the crystal grains. An inner peripheral surface of the cylindrical body has an arithmetic average roughness Ra of 1 μm or more and 3 μm or less, and an arithmetic height Rmax of 30 μm or more and 130 μm or less.

In one exemplary embodiment, a substrate processing method is provided. This substrate processing method comprises the steps of: providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and etching the metal compound film by forming a plasma from a first processing gas including a boron- and halogen-containing gas and a hydrogen-containing gas.

In one exemplary embodiment, a substrate processing method is provided. This substrate processing method comprises the steps of: providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and etching the metal compound film by forming a plasma from a first processing gas including a boron- and halogen-containing gas and a hydrogen-containing gas.

Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

Embodiments of the invention relate generally to protective leaching masks, and methods of manufacturing and using the same for leaching superabrasive elements such as polycrystalline diamond elements. In an embodiment, a protective leaching mask assembly includes a superabrasive element including a central axis and a superabrasive table, and a protective mask formed to protect at least a portion of the superabrasive element. The protective mask includes a base portion and at least one sidewall extending from the base portion and defining an opening generally opposite the base portion. The at least one sidewall includes an inner surface configured to abut with a selected portion of the superabrasive element being chemically resistant to a leaching agent and an outer surface sloping at an oblique angle relative to the central axis.