An approach to provide an electronic assembly process that includes receiving at least one electronic assembly after a solder reflow process using a Sn-containing solder and a water-soluble flux. The approach includes baking the at least one electronic assembly in an oxygen containing environment and, then cleaning the at least one electronic assembly in an aqueous cleaning process.

The invention relates to a method and a device for rapidly cooling a metal strip and removing residues present on the strip after this cooling, wherein the residues are formed during a cooling of said metal strip by a non-oxidizing liquid solution for the metal strip and a stripping liquid solution for the oxides present on the surface of the strip, or by a mixture of this liquid solution and a gas.

Provided is a reduction treatment method in which hydrogen radicals are efficiently generated in an amount required for reduction treatment and the surface of an object to be treated is reduced by a relatively simple treatment process. A reduction treatment method including: irradiating a hydrogen radical source-containing material with ultraviolet light having a wavelength of 255 nm or less to generate hydrogen radicals; and bringing the generated hydrogen radicals into contact with a surface of an object to be treated to reduce the surface.

The invention relates to a method for pickling a turbomachine component (1), comprising the following steps: positioning the component in a closed chamber (2), injecting a gas mixture (3) into the chamber (2), the gas mixture (3) comprising a halogenated gas, heating the chamber (2), the method being characterised in that: the gas mixture further comprises dihydrogen, the heating step is carried out at a temperature higher than 1000° C. and the step of injecting the gas mixture (3) is carried out by circulating through the chamber (2) a flow of gas mixture (3) having a flow rate between 6 and 15 times the volume of the chamber (2) per hour.

The invention relates to a method for pickling a turbomachine component (1), comprising the following steps: positioning the component in a closed chamber (2), injecting a gas mixture (3) into the chamber (2), the gas mixture (3) comprising a halogenated gas, heating the chamber (2), the method being characterised in that: the gas mixture further comprises dihydrogen, the heating step is carried out at a temperature higher than 1000° C. and the step of injecting the gas mixture (3) is carried out by circulating through the chamber (2) a flow of gas mixture (3) having a flow rate between 6 and 15 times the volume of the chamber (2) per hour.

In one exemplary embodiment, a substrate processing method is provided. This substrate processing method comprises the steps of: providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and etching the metal compound film by forming a plasma from a first processing gas including a boron- and halogen-containing gas and a hydrogen-containing gas.

Process for pre-treatment of a surface of a chromium containing corrosion resistant metallic substrate prior to further processing, wherein the metallic substrate is brought into contact with an in-situ generated activating agent, being the thermal decomposition product of a hydrofluoroolefin, the substrate and the activating agent are heated, and optionally the activating agent is partly or entirely removed before further processing.

This invention is related to a process for purification of metallic objects comprising an oil-adsorbing step in the presence of a liquid and a layer silicate component.

This invention is related to a process for purification of metallic objects comprising an oil-adsorbing step in the presence of a liquid and a layer silicate component.

A method of etching a metal includes performing at least two cycles of an etch process. A cycle of the etch process includes: performing a surface modification on an exposed surface of a metal layer over a substrate, performing a hydrogen treatment on the metal layer, and performing a cleaning treatment on the metal layer. The hydrogen treatment forms a layer of reaction products on the metal layer. The cleaning treatment removes the layer of reaction products.